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JANSR2N7480U3

International Rectifier

JANSR2N7480U3 by International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Terminal Finish: TIN LEAD; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

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TTI

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Vyrian

USA . 3,146 parts In-Stock

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Digiode

USA . 179 parts In-Stock

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Electronic Expediters

USA . 127 parts In-Stock

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ComSIT Distribution GmbH

Germany . 48 parts In-Stock

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Component Sense

UK . 31 parts In-Stock

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Modulus Dynamics

Lithuania . 21,617 parts In-Stock

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Ampacity Inc.

Singapore . 1,547 parts In-Stock

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Corphita

USA . 957 parts In-Stock

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Technical Specifications

Power Field Effect Transistors (FET) JANSR2N7480U3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from International Rectifier

Specs

Avalanche Energy Rating (EAS):

100 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

22 A

Maximum Drain Current (ID):

22 A

Maximum Drain-Source On Resistance:

.03 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-CBCC-N3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

CHIP CARRIER

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

1 W

Maximum Pulsed Drain Current (IDM):

88 A

Qualification:

Not Qualified

Reference Standard:

MIL-19500/703

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

NO LEAD

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

JANSR2N7480U3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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