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IRGP4266PBF

International Rectifier

IRGP4266PBF by International Rectifier

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 450 W; Maximum Collector Current (IC): 140 A; Maximum Gate-Emitter Threshold Voltage: 7.7 V; Maximum Gate-Emitter Voltage: 20 V;

Median Price

$4.525

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,822 parts In-Stock

1+ parts

-

100+ parts

$3.620

1k+ parts

$3.240

10k+ parts

$3.050

3,822

-

$3.620

$3.240

$3.050

DigiKey

USA . 3,822 parts In-Stock

1+ parts

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100+ parts

$4.760

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10k+ parts

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3,822

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$4.760

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Verical

USA . 3,822 parts In-Stock

1+ parts

-

100+ parts

$4.525

1k+ parts

$4.050

10k+ parts

$3.813

3,822

-

$4.525

$4.050

$3.813

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 590 parts In-Stock

1+ parts

$3.828

100+ parts

-

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590

$3.828

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Vyrian

USA . 393 parts In-Stock

1+ parts

$4.030

100+ parts

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393

$4.030

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DigiKey Marketplace

USA . 4,322 parts In-Stock

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4,322

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ComSIT Distribution GmbH

Germany . 50 parts In-Stock

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50

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Distributors (Availability)

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Ampacity Inc.

Singapore . 3,388 parts In-Stock

1+ parts

$3.430

100+ parts

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3,388

$3.430

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Modulus Dynamics

Lithuania . 18,871 parts In-Stock

1+ parts

$3.606

100+ parts

$3.462

1k+ parts

$3.318

10k+ parts

-

18,871

$3.606

$3.462

$3.318

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Corphita

USA . 318 parts In-Stock

1+ parts

$3.627

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318

$3.627

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Microchip USA

USA . 168 parts In-Stock

1+ parts

$25.155

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168

$25.155

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Perfect Parts

USA . 56 parts In-Stock

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56

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IRGP4266PBF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from International Rectifier

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

Maximum Fall Time (tf):

55 ns

Maximum Gate-Emitter Threshold Voltage:

7.7 V

Maximum Gate-Emitter Voltage:

20 V

Maximum Operating Temperature:

175 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Rise Time (tr):

105 ns

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Trade Compliance

IRGP4266PBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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