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IRG7PH46UDPBF

International Rectifier

IRG7PH46UDPBF by International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 390 W; Maximum Collector Current (IC): 108 A; Maximum Fall Time (tf): 60 ns;

Median Price

$25.990

Lifecycle Status

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7

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Rochester

USA . 36 parts In-Stock

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100+ parts

$5.320

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$4.760

10k+ parts

$4.480

36

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$5.320

$4.760

$4.480

Farnell

UK . 36 parts In-Stock

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$46.660

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36

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$46.660

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Digiode

USA . 562 parts In-Stock

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$5.634

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562

$5.634

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Vyrian

USA . 256 parts In-Stock

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$5.930

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256

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ComSIT Distribution GmbH

Germany . 187 parts In-Stock

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Prism Electronics

USA . 10 parts In-Stock

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Bristol Electronics

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Corphita

USA . 976 parts In-Stock

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$5.337

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976

$5.337

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Modulus Dynamics

Lithuania . 6,686 parts In-Stock

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$5.530

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$5.309

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$5.088

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6,686

$5.530

$5.309

$5.088

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Microchip USA

USA . 192 parts In-Stock

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$15.932

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192

$15.932

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Perfect Parts

USA . 1,131 parts In-Stock

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USA . 30 parts In-Stock

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30

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IRG7PH46UDPBF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from International Rectifier

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Fall Time (tf):

60 ns

Maximum Gate-Emitter Threshold Voltage:

6 V

Maximum Gate-Emitter Voltage:

30 V

JEDEC-95 Code:

TO-247AC

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Rise Time (tr):

60 ns

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

680 ns

Nominal Turn On Time (ton):

80 ns

Trade Compliance

IRG7PH46UDPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

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