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IRFHS9351TR2PBF

International Rectifier

IRFHS9351TR2PBF by International Rectifier

P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Terminal Form: NO LEAD; Minimum DS Breakdown Voltage: 30 V;

Median Price

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Lifecycle Status

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2

In-Stock Inventory

< 1k

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Vyrian

USA . 514 parts In-Stock

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514

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Digiode

USA . 22 parts In-Stock

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22

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Modulus Dynamics

Lithuania . 22,828 parts In-Stock

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$0.470

100+ parts

$0.451

1k+ parts

$0.432

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22,828

$0.470

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$0.432

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QUARKTWIN TECHNOLOGY LTD

USA . 28,748 parts In-Stock

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Metaverse IC Inc.

Canada . 9,000 parts In-Stock

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9,000

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Glotronic Ltd.

UK . 1,920 parts In-Stock

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1,920

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Corphita

USA . 497 parts In-Stock

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497

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Technical Specifications

Small Signal Field Effect Transistors (FET) IRFHS9351TR2PBF attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from International Rectifier

Specs

Additional Features:

HIGH RELIABILITY

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

5.1 A

Maximum Drain Current (ID):

2.3 A

Maximum Drain-Source On Resistance:

.17 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRFHS9351TR2PBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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