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IRFD022

International Rectifier

IRFD022 by International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

PAR Electronics

UK . 85 parts In-Stock

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85

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Lakeland Logistics Inc

USA . 75 parts In-Stock

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75

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

A-Z Elektronik GmbH

Germany . 5,882 parts In-Stock

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5,882

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Alle Elektronik GmbH

Germany . 3,921 parts In-Stock

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3,921

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Technical Specifications

Power Field Effect Transistors (FET) IRFD022 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from International Rectifier

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

2.2 A

Maximum Drain Current (ID):

2.2 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e0

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

1 W

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Trade Compliance

IRFD022 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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