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IRF9530N-002

International Rectifier

IRF9530N-002 by International Rectifier

P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Maximum Pulsed Drain Current (IDM): 52 A; Package Shape: RECTANGULAR;

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

Distributors (In-Stock)

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Vyrian

USA . 408 parts In-Stock

1+ parts

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408

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Digiode

USA . 364 parts In-Stock

1+ parts

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364

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 2,263 parts In-Stock

1+ parts

$1.211

100+ parts

$1.163

1k+ parts

$1.114

10k+ parts

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2,263

$1.211

$1.163

$1.114

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Corphita

USA . 613 parts In-Stock

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613

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Technical Specifications

Power Field Effect Transistors (FET) IRF9530N-002 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from International Rectifier

Specs

Avalanche Energy Rating (EAS):

250 mJ

Case Connection:

DRAIN

Configuration:

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

13 A

Maximum Drain-Source On Resistance:

.2 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

52 A

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRF9530N-002 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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