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EPCQ128SI16N

Intel

EPCQ128SI16N by Intel

EPCQ128SI16N by Intel is a 128Mbit NOR Flash Memory with synchronous operation, 133MHz clock frequency, and 100000 write/erase cycles. It is ideal for industrial applications requiring high-speed data storage in compact devices due to its small outline package and low standby current of 0.0001Amp.

Median Price

$43.820

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Arrow

USA . 10,729 parts In-Stock

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Verical

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Vyrian

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Digiode

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Nova Conductors

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Cogito LLC

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NexGen Digital

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Contempo Components LLC

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MARBEL Systems

Belgium . 826 parts In-Stock

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Modulus Dynamics

Lithuania . 5,998 parts In-Stock

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Advanced Electronics

New Zealand . 500 parts In-Stock

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Texas Native Microelectronics

USA . 7,204 parts In-Stock

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$3.176

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$3.049

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$2.954

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Kenton Components

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Corohmni

South Africa . 135 parts In-Stock

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Qasali Group International

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Ampacity Inc.

Singapore . 13,893 parts In-Stock

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Semicontronic

India . 13,812 parts In-Stock

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One Stop Electronics

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Corphita

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Microchip USA

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Futuretech Components

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Supply Digital

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Overview

Experience the power of Intel's EPCQ128SI16N Flash Memory - a cutting-edge solution that offers unparalleled reliability and performance. Ideal for a wide range of applications, this product boasts a durable plastic/epoxy body and synchronous operating mode. With a nominal supply voltage of 3.3V, 100,000 write/erase cycles, and 134,217,728-bit memory density, the EPCQ128SI16N is designed to exceed your expectations. Trust Intel's expertise in technology and innovation to deliver a superior product that provides unmatched value and benefits to our customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material ensures durability and reliability for long-term use.

Surface Mount: YES

Surface mount capability allows for easy installation on PCBs, saving space and reducing assembly time.

Operating Mode: SYNCHRONOUS

Synchronous operation enables faster data transfer and better performance in high-speed applications.

Nominal Supply Voltage / Vsup (V): 3.3

Operates at a standard voltage level of 3.3V, making it compatible with a wide range of systems.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this flash memory can withstand harsh environmental conditions.

Organization: 128MX1

Organized as 128 megabits x 1 bit, providing a high-capacity storage solution for data-intensive applications.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high speed performance.

Endurance: 100000 Write/Erase Cycles

Long endurance rating ensures reliable data storage with a high number of write and erase cycles.

Technical Specifications

Flash Memory EPCQ128SI16N attributes and parameters. Explore more Flash Memory devices from Intel

Specs

Maximum Clock Frequency (fCLK):

133 MHz

Minimum Data Retention Time:

20

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

10.3 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

1

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

16

No. of Words:

134217728 words

No. of Words Code:

128M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128MX1

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/3.3

Programming Voltage (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

2.65 mm

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Type:

NOR TYPE

Width:

7.5 mm

Maximum Write Cycle Time (tWC):

8 ms

Trade Compliance

EPCQ128SI16N Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

Manufacturer Highlights

Intel

Intel Corporation (commonly known as Intel) is an American multinational corporation and technology company headquartered in Santa Clara, California. It is one of the world's largest semiconductor chip manufacturer by revenue, and is one of the developers of the x86 series of instruction sets found in most personal computers (PCs). Incorporated in Delaware, Intel ranked No. 45 in the 2020 Fortune 500 list of the largest United States corporations by total revenue for nearly a decade, from 2007 to 2016 fiscal years. Intel supplies microprocessors for computer system manufacturers such as Acer, Lenovo, HP, and Dell. Intel also manufactures motherboard chipsets, network interface controllers and integrated circuits, flash memory, graphics chips, embedded processors and other devices related to communications and computing. Intel (integrated and electronics) was founded on July 18, 1968, by semiconductor pioneers Gordon Moore (of Moore's law) and Robert Noyce (1927–1990), and is associated with the executive leadership and vision of Andrew Grove. Intel was a key component of the rise of Silicon Valley as a high-tech center. Noyce was a key inventor of the integrated circuit (microchip). Intel was an early developer of SRAM and DRAM memory chips, which represented the majority of its business until 1981. Although Intel created the world's first commercial microprocessor chip in 1971, it was not until the success of the personal computer (PC) that this became its primary business.

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