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IDT70V27L20PF

Integrated Device Technology

IDT70V27L20PF by Integrated Device Technology

MULTI-PORT SRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: LFQFP; Package Shape: SQUARE; No. of Words: 32768 words;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

SRAM IDT70V27L20PF attributes and parameters. Explore more SRAM devices from Integrated Device Technology

Specs

Maximum Access Time:

20 ns

Additional Features:

CONFIGURED AS 32K X 16

Input/Output Type:

COMMON

JESD-30 Code:

S-PQFP-G100

JESD-609 Code:

e0

Length:

14 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

100

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32KX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP100,.63SQ,20

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

240

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Maximum Standby Current:

.003 Amp

Minimum Standby Voltage:

3 V

Sub-Category:

SRAMs

Maximum Supply Current:

220 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn85Pb15)

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

20

Width:

14 mm

Trade Compliance

IDT70V27L20PF Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.B

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Device Technology

Renesas Electronics Corporation (TSE: 6723, “Renesas”), a premier supplier of advanced semiconductor solutions, and Integrated Device Technology, Inc. (“IDT”), a leading supplier of analog mixed-signal products, including sensors, connectivity and wireless power, today jointly announced the successful completion of Renesas’ acquisition of IDT, as of March 30, 2019 JST, March 29, 2019 PDT, following approvals by IDT shareholders and the relevant regulatory authorities.

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