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71V3557S85PFI8

Integrated Device Technology

71V3557S85PFI8 by Integrated Device Technology

ZBT SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 100; Package Code: LQFP; Package Shape: RECTANGULAR; JESD-30 Code: R-PQFP-G100;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

SRAM 71V3557S85PFI8 attributes and parameters. Explore more SRAM devices from Integrated Device Technology

Specs

Maximum Access Time:

8.5 ns

Additional Features:

FLOW-THROUGH ARCHITECTURE

Maximum Clock Frequency (fCLK):

90 MHz

Input/Output Type:

COMMON

JESD-30 Code:

R-PQFP-G100

JESD-609 Code:

e0

Length:

20 mm

Memory Density:

4718592 bit

Memory IC Type:

Memory Width:

36

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Terminals:

100

No. of Words:

131072 words

No. of Words Code:

128K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

128KX36

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP100,.63X.87

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

225

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.6 mm

Maximum Standby Current:

.045 Amp

Minimum Standby Voltage:

3.14 V

Sub-Category:

SRAMs

Maximum Supply Current:

235 mA

Maximum Supply Voltage (Vsup):

3.465 V

Minimum Supply Voltage (Vsup):

3.135 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

20

Width:

14 mm

Trade Compliance

71V3557S85PFI8 Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.2.A

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

Integrated Device Technology

Renesas Electronics Corporation (TSE: 6723, “Renesas”), a premier supplier of advanced semiconductor solutions, and Integrated Device Technology, Inc. (“IDT”), a leading supplier of analog mixed-signal products, including sensors, connectivity and wireless power, today jointly announced the successful completion of Renesas’ acquisition of IDT, as of March 30, 2019 JST, March 29, 2019 PDT, following approvals by IDT shareholders and the relevant regulatory authorities.

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