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TD162N16KOF

Infineon Technologies

TD162N16KOF by Infineon Technologies

Infineon Technologies' TD162N16KOF SCR has a max DC Gate Trigger Current of 150mA, Non Repetitive Peak On-state Current of 4400A, and Max On-state Current of 162A. It is used in applications requiring high current switching capabilities such as industrial power control systems.

Median Price

$128.360

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Forefront Electronics and Design

USA . 10 parts In-Stock

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$102.900

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Galco

USA . 7 parts In-Stock

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$153.820

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Vyrian

USA . 1,156 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 160 parts In-Stock

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Nova Conductors

Japan . 39 parts In-Stock

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Digiode

USA . 8 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 2 parts In-Stock

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LWI Electronics Inc

India . 2 parts In-Stock

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J & M Industries LLC

USA . 2 parts In-Stock

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Holdelec - ElecDif-Pro

France . 1 parts In-Stock

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Benley Electronics

USA . 1 parts In-Stock

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$1.750

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Modulus Dynamics

Lithuania . 2,212 parts In-Stock

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$3.534

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$3.393

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$3.251

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AZTECH Wire

Italy . 546 parts In-Stock

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$18.873

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Corphita

USA . 984 parts In-Stock

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Bastille Electronics

Australia . 450 parts In-Stock

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Metaverse IC Inc.

Canada . 380 parts In-Stock

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Overview

Unlock the power and efficiency of the TD162N16KOF Silicon Controlled Rectifier by Infineon Technologies. With a maximum on-state current of 162A and a non-repetitive peak on-state current of 4400A, this SCR is built to perform under pressure. Its single configuration with built-in diode makes it easy to install, while the UL recognized reference standard ensures reliability. From industrial machinery to power supplies, this SCR is the perfect choice for applications that demand high performance and durability. Experience the quality and value that only Infineon Technologies can deliver with the TD162N16KOF.

Feature Benefit Bullets

Max DC Gate Trigger Current: 150 mA

This allows for precise control of when the SCR turns on, making it ideal for applications where timing is critical.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and reduces the need for additional components, making this SCR more cost-effective.

Non Repetitive Peak On-state Current: 4400 A

With a high current rating, this SCR can handle heavy loads and brief surges, making it suitable for high-power applications.

Package Shape: RECTANGULAR

The rectangular shape provides a compact design, allowing for easy installation in tight spaces.

Maximum On-state Current: 162 A

This high current rating ensures reliable performance under heavy loads, making this SCR a dependable choice for demanding applications.

Quick Connects Description: G-GR

The G-GR quick connects make installation quick and easy, reducing downtime and increasing efficiency.

Repetitive Peak Reverse Voltage: 1600 V

The high reverse voltage rating provides protection against voltage spikes, enhancing the reliability of the SCR in high-voltage applications.

No. of Terminals: 5

The five terminals offer flexibility in connection options, allowing for versatile integration into different circuit configurations.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides secure mounting and heat dissipation, ensuring stable performance under various operating conditions.

Maximum Operating Temperature: 125 °C

The high operating temperature range allows for operation in harsh environments, making this SCR suitable for industrial applications.

Minimum Operating Temperature: -40 °C

With a low minimum operating temperature, this SCR can function reliably in cold environments, enhancing its versatility.

Trigger Device Type: SCR

The SCR design offers high reliability and fast switching speeds, making it suitable for applications requiring precise control of power flow.

Maximum RMS On-state Current: 260 A

The high RMS current rating ensures stable operation under continuous load, making this SCR suitable for long-duration applications.

Case Connection: ISOLATED

The isolated case connection provides enhanced safety and protection against electrical hazards, making this SCR a trustworthy choice for sensitive applications.

Repetitive Peak Off-state Voltage: 1600 V

The high off-state voltage rating provides protection against voltage surges, ensuring the SCR's durability in high-voltage environments.

Screw Terminals Description: A-K-AK

The A-K-AK screw terminals offer secure connections, preventing loose connections and reducing the risk of electrical faults.

Reference Standard: UL RECOGNIZED

Being UL Recognized ensures compliance with safety standards, making this SCR a reliable choice for applications where safety is a top priority.

Technical Specifications

Silicon Controlled Rectifiers (SCR) TD162N16KOF attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Infineon Technologies

Specs

Case Connection:

Maximum DC Gate Trigger Current:

150 mA

Quick Connects Description:

G-GR

Screw Terminals Description:

A-K-AK

JESD-30 Code:

R-XUFM-X5

Non Repetitive Peak On-state Current:

4400 A

No. of Elements:

1

No. of Terminals:

5

Maximum On-state Current:

162 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

260 A

Reference Standard:

UL RECOGNIZED

Repetitive Peak Off-state Voltage:

1600 V

Repetitive Peak Reverse Voltage:

1600 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

TD162N16KOF Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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