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T640N18TOF

Infineon Technologies

T640N18TOF by Infineon Technologies

T640N18TOF by Infineon Technologies is a SINGLE SCR with max DC Gate Trigger Current of 250mA, Non Repetitive Peak On-state Current of 9400A, and Max On-state Current of 644A. It is used in applications requiring high current switching capabilities such as industrial power supplies and motor control systems.

Median Price

$127.862

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 564 parts In-Stock

1+ parts

$124.583

100+ parts

-

1k+ parts

-

10k+ parts

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564

$124.583

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Vyrian

USA . 639 parts In-Stock

1+ parts

$131.140

100+ parts

-

1k+ parts

-

10k+ parts

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639

$131.140

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-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 529 parts In-Stock

1+ parts

$3.114

100+ parts

$2.989

1k+ parts

$2.865

10k+ parts

-

529

$3.114

$2.989

$2.865

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Corphita

USA . 884 parts In-Stock

1+ parts

$118.026

100+ parts

-

1k+ parts

-

10k+ parts

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884

$118.026

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Perfect Parts

USA . 16 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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16

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Overview

Discover the T640N18TOF by Infineon Technologies, a high-quality Silicon Controlled Rectifier (SCR) that offers exceptional performance and reliability. With a maximum DC Gate Trigger Current of 250 mA and a Non Repetitive Peak On-state Current of 9400 A, this SCR is perfect for a wide range of applications. Whether you need it for industrial machinery or power electronics, this product delivers unparalleled value with its surface mount capability, round package shape, and maximum leakage current of 50 mA. Trust in Infineon Technologies to provide innovative solutions that exceed expectations.

Feature Benefit Bullets

Maximum DC Gate Trigger Current: 250 mA

This product has a low gate trigger current requirement, making it suitable for applications where limited gate drive power is available.

Configuration: SINGLE

Single configuration offers simplicity in design and installation, making it easy to integrate into various systems.

Non Repetitive Peak On-state Current: 9400 A

The high non repetitive peak current rating allows for handling of large transient currents without risk of damaging the device, making it suitable for high power applications.

Surface Mount: YES

Surface mount packaging enables easy and compact PCB assembly, saving space and reducing overall system size.

Package Shape: ROUND

Round package shape may offer better thermal performance and mechanical stability compared to other shapes, enhancing reliability and longevity of the product.

Maximum On-state Current: 644 A

High on-state current rating allows for handling of heavy loads, making this product suitable for high current applications.

Maximum Leakage Current: 50 mA

Low leakage current ensures minimal power loss when the device is in the off state, improving overall efficiency of the system.

Repetitive Peak Reverse Voltage: 1800 V

High reverse voltage rating provides protection against voltage spikes and reverse polarity, making it suitable for demanding applications.

No. of Terminals: 3

The 3-terminal configuration simplifies the connection and control of the device, making it user-friendly for various applications.

Package Style (Meter): DISK BUTTON

The disk button package style offers a compact and robust design, ensuring easy installation and reliable performance in different environments.

Maximum Operating Temperature: 125 °C

The high operating temperature range allows the device to operate reliably in harsh environments with elevated temperatures, expanding its application range.

Trigger Device Type: SCR

Being a Silicon Controlled Rectifier (SCR), this device offers precise control over current flow in high power applications, making it ideal for tasks that require high reliability and performance.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures the device can function in cold environments without loss of performance, making it versatile for different operating conditions.

Maximum RMS On-state Current: 1450 A

High RMS on-state current rating allows the device to handle continuous high current loads efficiently, making it suitable for applications with prolonged operation at high currents.

Maximum DC Gate Trigger Voltage: 2.2 V

Low gate trigger voltage simplifies the control and drive circuitry requirements, enhancing the device's ease of use and compatibility with various control systems.

Repetitive Peak Off-state Voltage: 1800 V

The high repetitive peak off-state voltage rating ensures reliable insulation and protection against voltage spikes, making it suitable for high voltage applications.

Minimum Critical Rate of Rise of Off-state Voltage: 1000 V/us

This device can withstand fast-changing voltage levels, protecting it from voltage surges or transients, and ensuring stable operation in dynamic environments.

Maximum Holding Current: 300 mA

The device's holding current is low, reducing power consumption in the off-state and improving energy efficiency of the system.

Nominal Circuit Commutated Turn-off Time: 250 us

The fast turn-off time allows for quick and precise control over the current flow, making it suitable for applications where rapid switching and response times are crucial.

Technical Specifications

Silicon Controlled Rectifiers (SCR) T640N18TOF attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Infineon Technologies

Specs

Nominal Circuit Commutated Turn-off Time:

250 us

Configuration:

Minimum Critical Rate of Rise of Off-state Voltage:

1000 V/us

Maximum DC Gate Trigger Current:

250 mA

Maximum DC Gate Trigger Voltage:

2.2 V

Maximum Holding Current:

300 mA

JESD-30 Code:

O-XXDB-X3

Maximum Leakage Current:

50 mA

Non Repetitive Peak On-state Current:

9400 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

644 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Maximum RMS On-state Current:

1450 A

Repetitive Peak Off-state Voltage:

1800 V

Repetitive Peak Reverse Voltage:

1800 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

YES

Terminal Form:

UNSPECIFIED

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trigger Device Type:

SCR

Trade Compliance

T640N18TOF Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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