Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Infineon's IRF200P222 is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring a max IDM of 728A and EAS of 1070mJ, this MOSFET has 0.0066 ohm RDS(ON) and can handle up to 182A drain current efficiently in ENHANCEMENT MODE operation.
Median Price
$7.319
Lifecycle Status
Suppliers In-Stock
15
In-Stock Inventory
1k+
Chip1Stop
1+ parts
$5.920
100+ parts
$4.350
1k+ parts
-
10k+ parts
$4.220
Arrow
$6.978
$5.573
$5.072
Farnell
$7.660
$3.820
$3.810
Mouser Electronics
$9.500
$6.600
$5.390
RS (Exports)
$9.548
$7.732
Element14
$13.590
$9.700
$7.710
Verical
$6.364
Rochester
$4.400
$3.940
$3.700
Digiode
$3.962
Nova Conductors
$7.350
Maritex
$7.809
TME
$8.730
$5.620
Chip Stock
Vyrian
Cyclops Electronics Ltd
Aztec Data Supply Inc.
$0.658
Ampacity Inc.
$3.540
Corphita
$3.753
Modulus Dynamics
$6.964
$6.685
$6.407
Corohmni
Semicontronic
$7.517
$7.479
Continental Prestige Electronics
$9.160
$6.460
Microchip USA
$28.980
Lixinc
RC Electronics
$7.280
$6.640
$6.440
Infinite Electronics LLP (Excess)
Futuretech Components
Argo Parts USA
iodParts Technologies Inc.
$5.025
$4.467
A-Z Elektronik GmbH
Eastek
Authorized Procurement Solutions
GreenTree Electronics
Advanced Electronics
The plastic/epoxy package body material provides durability and protection for the internal components of the FET, ensuring reliable performance in various operating conditions.
N-channel FETs typically have higher electron mobility and faster switching speeds compared to P-channel FETs, making them suitable for high-speed switching applications.
The built-in diode allows for efficient freewheeling and protection against voltage spikes, enhancing the overall reliability of the FET in switching applications.
Designed specifically for switching applications, this FET is optimized for fast turn-on and turn-off times, making it suitable for power control and conversion tasks.
With a minimum breakdown voltage of 200 V, this FET can handle high voltage loads and protect against voltage surges, ensuring reliable operation in demanding environments.
The through-hole terminal form allows for easy installation and soldering onto a PCB, ensuring a secure and reliable connection in various electronic circuits.
With a high maximum pulsed drain current rating of 728 A, this FET can handle sudden current surges without compromising performance, making it suitable for high-power applications.
The high avalanche energy rating of 1070 mJ indicates the FET's ability to withstand high-energy transient events, ensuring reliable operation in rugged industrial environments.
Having three terminals simplifies the FET's connection to external circuits, enabling ease of integration and enhanced circuit design flexibility.
The flange mount package style allows for secure and stable mounting of the FET onto a heatsink or chassis, improving thermal management and overall reliability.
The metal-oxide semiconductor technology used in this FET offers high efficiency, fast switching speeds, and low power consumption, making it ideal for energy-efficient applications.
Silicon-based transistor elements have high thermal stability, low on-resistance, and good noise performance, ensuring reliable operation and optimal power efficiency in various applications.
The tin terminal finish provides excellent solderability and corrosion resistance, ensuring long-term reliability and stable electrical connections in harsh operating environments.
With a maximum drain current rating of 182 A, this FET can handle high continuous current loads, making it suitable for power switching and control applications requiring high current capacity.
The low drain-source on resistance of 0.0066 ohm minimizes power dissipation and heat generation, ensuring high efficiency and reduced losses in power switching applications.
Having a single terminal position simplifies the FET's installation and connection, reducing the risk of errors and ensuring a secure and reliable electrical connection in the circuit.
The drain case connection allows for efficient heat dissipation and improved thermal management, enhancing the FET's reliability and performance in high-power applications.
Power Field Effect Transistors (FET) IRF200P222 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies
Avalanche Energy Rating (EAS):
Case Connection:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Pulsed Drain Current (IDM):
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
IRF200P222 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
LM317T
National Semiconductor
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Package Shape: RECTANGULAR; Minimum Input-Output Voltage Differential: 3 V;
MBR1560CT
Yangzhou Yangjie Electronics
RECTIFIER DIODE; Surface Mount: NO; Maximum Operating Temperature: 150 Cel; Maximum Repetitive Peak Reverse Voltage: 60 V; Technology: SCHOTTKY; Maximum Non Repetitive Peak Forward Current: 150 A;
BAV99
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
ULN2803A
Vishay Intertechnology
NPN; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PDIP-T18;
NE555D
Texas Instruments
NE555D by Texas Instruments is an 8-terminal IC with a supply voltage range of 4.5V to 16V, suitable for analog waveform generation applications. It operates at temperatures from 0°C to 70°C and has a max supply current of 15mA. The package style is small outline, making it ideal for compact electronic designs.
LM555CN
LM555CN by Texas Instruments is an Analog Waveform Generation IC with a supply voltage range of 4.5V to 16V. It operates b/w 0°C to 70°C, making it suitable for commercial applications. This rectangular package IC has dual terminals and uses bipolar technology for pulse generation in various electronic circuits.
1N4148WS
Continental Device India
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
General Diode
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Reverse Recovery Time: .004 us; Terminal Finish: Tin/Lead (Sn/Pb); No. of Elements: 1;
Kec
RECTIFIER DIODE; Surface Mount: NO; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Non Repetitive Peak Forward Current: 2 A; Config: SINGLE; Maximum Operating Temperature: 200 Cel;
Laube Technology
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
2N2222A
Good-ark Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): .8 A;
ULN2803ADW
ULN2803ADW by Texas Instruments is a peripheral driver with 8 functions, open-collector output characteristics, and built-in transient protections. It operates b/w -40 to 85 °C and has a max supply voltage of 3 V. Ideal for applications requiring buffer or inverter-based peripheral drivers with sink current flow direction.
LM107H
Raytheon Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Low-Offset: NO;
BSS138
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Drain Current (Abs) (ID): .2 A; Maximum Feedback Capacitance (Crss): 8 pF;
Daco Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Tt Electronics Plc
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; Qualification Status: Not Qualified; JESD-30 Code: R-PSFM-T3;
New Jersey Semiconductor Products
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Package Shape: ROUND;
SMBJ18CA
Secos
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Bourns
FDS8949-F085
Onsemi
FDS8949-F085 by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage. It features 2 elements with built-in diode for SWITCHING applications. With 20A IDM and 0.029 ohm RDS(on), it operates in ENHANCEMENT MODE at up to 150°C, making it ideal for high-power electronics.
IRFP460
IXYS Corporation
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): 20 A;
IRLML2060TRPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Transistor Element Material: SILICON; Transistor Application: SWITCHING;
FDB52N20TM
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 357 W; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Position: SINGLE;
IRF9540NPBF
IRF9540NPBF by Infineon is a P-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 76A Max Pulsed Drain Current, 430mJ Avalanche Energy Rating, and 0.117 ohm Max RDS(on). The transistor operates in ENHANCEMENT MODE with a max temp of 175°C, making it suitable for high-power circuits.
IRLML9301TRPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Operating Mode: ENHANCEMENT MODE; Terminal Finish: Matte Tin (Sn);
FDD86102LZ
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 54 W; JESD-30 Code: R-PSSO-G2; Maximum Drain Current (ID): 8 A;
FQT7N10LTF
FQT7N10LTF by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It has a Max IDM of 6.8A and EAS of 50mJ, suitable for SWITCHING applications. This SINGLE transistor in PLASTIC/EPOXY package operates in ENHANCEMENT MODE at up to 150°C, with 0.38 ohm RDS(on) and 2W Pdiss.
IRF7342TRPBF
IRF7342TRPBF by Infineon Technologies is a P-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features 27A Max IDM and 114mJ EAS, operating in ENHANCEMENT MODE. With GULL WING terminals and a SMALL OUTLINE package style, it offers 0.105 ohm RDS(on) for efficient performance.
BSC011N03LSIATMA1
Infineon's BSC011N03LSIATMA1 is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 400A IDM, 0.0015 ohm RDS(on), and 100mJ EAS rating. Its small outline package and DUAL terminal position make it suitable for various power management systems.
BSC220N20NSFDATMA1
BSC220N20NSFDATMA1 by Infineon is a N-CHANNEL FET for SWITCHING applications. It features a 200V DS Breakdown Voltage, 208A Pulsed Drain Current, and 0.022 ohm On Resistance. With a max power dissipation of 214W, this MOSFET operates in an Enhancement Mode with an operating temperature range from -55 to 175°C.
Infineon's IRLML9301TRPBF is a P-CHANNEL FET for SWITCHING applications. Features include 30V DS Breakdown Voltage, 15A IDM, and 0.064 ohm RDS(ON). With a small outline package style, it operates b/w -55 to 150 °C and has a max power dissipation of 1.3W.
IPA80R650CEXKSA2
Infineon's IPA80R650CEXKSA2 is a N-CHANNEL FET with 800V DS breakdown voltage, ideal for SWITCHING applications. Features include 24A IDM, 340mJ EAS, and 0.65 ohm RDS(on). Package style is FLANGE MOUNT with THROUGH-HOLE terminals.
SCT2280KEC
ROHM
ROHM's SCT2280KEC is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and can handle up to 35A pulsed drain current. With a max power dissipation of 108W and operating temperature of 175°C, it offers reliable performance in various industrial settings.
FDC658AP-G
Power Field-Effect Transistors; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Terminal Finish: MATTE TIN; Peak Reflow Temperature (C): 260;
IRFR5505TRPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 57 W; JEDEC-95 Code: TO-252AA; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IRFZ44NSTRLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; Maximum Drain Current (Abs) (ID): 49 A; Avalanche Energy Rating (EAS): 150 mJ;
CSD18540Q5B
CSD18540Q5B by Texas Instruments is an N-CHANNEL Power FET with 60V DS Breakdown Voltage and 400A IDM. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 0.0033 ohm Drain-Source On Resistance. The transistor features a METAL-OXIDE SEMICONDUCTOR technology and can withstand temperatures from -55 to 175 °C.
IRF640
STMicroelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Package Shape: RECTANGULAR; Package Style (Meter): FLANGE MOUNT;
IRF7309TRPBF
IRF7309TRPBF by Infineon is a Power FET with N-Channel and P-Channel types, suitable for switching applications. It features 2 elements with built-in diode, a max drain current of 4A, and a min DS breakdown voltage of 30V. With a package style of small outline and operating temperature up to 150°C, it's ideal for compact electronic devices requiring efficient power management.
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IRF2804STRL7PP
Infineon Technologies' IRF2804STRL7PP is a power FET with N-channel polarity and a built-in diode. It is designed for switching applications, offering a min DS breakdown voltage of 40V and max pulsed drain current of 1360A. Its small outline package style and low on-resistance make it suitable for high-power operations.
IRF2804STRLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Maximum Drain-Source On Resistance: .002 ohm; Operating Mode: ENHANCEMENT MODE;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Additional Features: AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE; Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier;
IRF250
Advanced Microelectronic Products
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
Motorola
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Terminal Position: BOTTOM; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
International Rectifier Hirel Products
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Shape: ROUND; Package Style (Meter): FLANGE MOUNT;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Terminal Finish: Tin/Lead (Sn/Pb); Operating Mode: ENHANCEMENT MODE;
STMicroelectronics' IRF250 is a N-CHANNEL FET with 200V DS Breakdown Voltage and 120A IDM. Ideal for SWITCHING applications, it features a 0.085 ohm Drain-Source On Resistance and 150W Power Dissipation, making it suitable for high-power circuits.
Littelfuse
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Drain Current (Abs) (ID): 30 A; Terminal Finish: Tin/Lead (Sn/Pb);
First Components International
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0;
Intersil
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Drain Current (Abs) (ID): 30 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
N-CHANNEL; Configuration: SINGLE; Maximum Drain Current (ID): 30 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; Operating Mode: ENHANCEMENT MODE;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Drain Current (ID): 30 A; Maximum Operating Temperature: 150 Cel;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Transistor Element Material: SILICON; JEDEC-95 Code: TO-204AE;
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Drain-Source On Resistance: .085 ohm; Package Style (Meter): FLANGE MOUNT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Siliconix
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; No. of Elements: 1; Operating Mode: ENHANCEMENT MODE;
Harris Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: PIN/PEG;
Samsung
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Drain Current (ID): 30 A; Operating Mode: ENHANCEMENT MODE;
IRF2805
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Maximum Pulsed Drain Current (IDM): 700 A; No. of Terminals: 3;
Supply Digital Components
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