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IRF1404PBF

Infineon Technologies

IRF1404PBF by Infineon Technologies

IRF1404PBF by Infineon Technologies is a power FET with N-channel polarity. It has a min DS breakdown voltage of 40V and can handle a max pulsed drain current of 808A. This transistor is commonly used for switching applications.

Median Price

$1.792

Lifecycle Status

Suppliers In-Stock

34

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 281,981 parts In-Stock

1+ parts

$0.578

100+ parts

-

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281,981

$0.578

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Adafruit Industries

USA . 600 parts In-Stock

1+ parts

$1.037

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$0.985

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$0.985

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600

$1.037

$0.985

$0.985

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Chip1Stop

Japan . 15 parts In-Stock

1+ parts

$1.130

100+ parts

$0.591

1k+ parts

$0.504

10k+ parts

$0.464

15

$1.130

$0.591

$0.504

$0.464

Distrelec

Netherlands . 75 parts In-Stock

1+ parts

$2.423

100+ parts

$1.940

1k+ parts

$1.704

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75

$2.423

$1.940

$1.704

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Farnell

UK . 7,710 parts In-Stock

1+ parts

$2.520

100+ parts

$1.110

1k+ parts

$0.810

10k+ parts

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7,710

$2.520

$1.110

$0.810

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DigiKey

USA . 2,646 parts In-Stock

1+ parts

$2.860

100+ parts

$1.274

1k+ parts

$0.950

10k+ parts

$0.857

2,646

$2.860

$1.274

$0.950

$0.857

Newark

USA . 8,341 parts In-Stock

1+ parts

$3.050

100+ parts

$1.520

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$1.260

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8,341

$3.050

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$1.260

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Mouser Electronics

USA . 5,932 parts In-Stock

1+ parts

$3.330

100+ parts

$1.490

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$1.150

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$1.080

5,932

$3.330

$1.490

$1.150

$1.080

Element14

Singapore . 7,738 parts In-Stock

1+ parts

$3.940

100+ parts

$1.520

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$1.370

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$1.290

7,738

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Verical

USA . 281,981 parts In-Stock

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Rochester

USA . 103,236 parts In-Stock

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$0.963

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Avnet

USA . 645 parts In-Stock

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100+ parts

$0.751

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$0.716

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645

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$0.751

$0.716

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Future Electronics

Canada . 400 parts In-Stock

1+ parts

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100+ parts

$0.910

1k+ parts

$0.860

10k+ parts

$0.815

400

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$0.910

$0.860

$0.815

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 629 parts In-Stock

1+ parts

$0.654

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629

$0.654

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Nova Conductors

Japan . 700 parts In-Stock

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$0.984

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700

$0.984

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Maritex

Poland . 12,009 parts In-Stock

1+ parts

$1.021

100+ parts

$0.575

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$0.495

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12,009

$1.021

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$0.495

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Bristol Electronics

USA . 71 parts In-Stock

1+ parts

$2.132

100+ parts

$1.322

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71

$2.132

$1.322

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TME

Poland . 1,066 parts In-Stock

1+ parts

$2.560

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$1.040

1k+ parts

$0.920

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$0.810

1,066

$2.560

$1.040

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$0.810

Chip Stock

USA . 112,500 parts In-Stock

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Vyrian

USA . 60,627 parts In-Stock

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Cyclops Electronics Ltd

UK . 22,900 parts In-Stock

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ComSIT USA

USA . 4,998 parts In-Stock

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ComSIT Distribution GmbH

Germany . 3,998 parts In-Stock

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IBS Electronics

USA . 3,000 parts In-Stock

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$2.819

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$1.669

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$1.669

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Schukat

Germany . 520 parts In-Stock

1+ parts

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$1.136

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$0.910

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520

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$1.136

$0.910

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Partservice

France . 410 parts In-Stock

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$0.922

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$0.878

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$0.878

410

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$0.922

$0.878

$0.878

Rutronik

Germany . 300 parts In-Stock

1+ parts

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100+ parts

$0.840

1k+ parts

$0.648

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300

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$0.840

$0.648

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Micros

Poland . 299 parts In-Stock

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$0.884

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$0.839

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$0.839

299

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$0.884

$0.839

$0.839

Micros sp.j. W. Kędra i J. Lic

Poland . 250 parts In-Stock

1+ parts

-

100+ parts

$0.988

1k+ parts

$0.940

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$0.940

250

-

$0.988

$0.940

$0.940

Prism Electronics

USA . 150 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 71 parts In-Stock

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Dan-Mar Components

USA . 71 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 50 parts In-Stock

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Huijzer Components

Netherlands . 5 parts In-Stock

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5

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 61,014 parts In-Stock

1+ parts

$0.374

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61,014

$0.374

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Semicontronic

India . 60,785 parts In-Stock

1+ parts

$0.473

100+ parts

$0.461

1k+ parts

$0.459

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60,785

$0.473

$0.461

$0.459

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Corphita

USA . 979 parts In-Stock

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$0.619

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979

$0.619

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Corohmni

South Africa . 207 parts In-Stock

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$0.646

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207

$0.646

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Aranea Global

USA . 1,000 parts In-Stock

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$0.964

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$0.925

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1,000

$0.964

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$0.925

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Argo Parts USA

USA . 2,099 parts In-Stock

1+ parts

$0.984

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2,099

$0.984

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Benley Electronics

USA . 5 parts In-Stock

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$1.000

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5

$1.000

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Advanced Electronics

New Zealand . 600 parts In-Stock

1+ parts

$1.037

100+ parts

$0.985

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$0.985

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600

$1.037

$0.985

$0.985

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Modulus Dynamics

Lithuania . 3,068 parts In-Stock

1+ parts

$1.157

100+ parts

$1.111

1k+ parts

$1.064

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3,068

$1.157

$1.111

$1.064

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Aztec Data Supply Inc.

USA . 2,717 parts In-Stock

1+ parts

$1.647

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2,717

$1.647

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Continental Prestige Electronics

USA . 10,499 parts In-Stock

1+ parts

$2.040

100+ parts

$1.290

1k+ parts

$0.967

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10,499

$2.040

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$0.967

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Microchip USA

USA . 359 parts In-Stock

1+ parts

$13.910

100+ parts

$13.820

1k+ parts

$13.780

10k+ parts

$13.740

359

$13.910

$13.820

$13.780

$13.740

Infinite Electronics LLP (Excess)

. 455,049 parts In-Stock

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Metaverse IC Inc.

Canada . 139,090 parts In-Stock

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Authorized Procurement Solutions

USA . 60,000 parts In-Stock

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Kepictronics

USA . 43,323 parts In-Stock

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43,323

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RC Electronics

USA . 36,432 parts In-Stock

1+ parts

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$1.140

1k+ parts

$1.040

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$1.010

36,432

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$1.140

$1.040

$1.010

Perfect Parts

USA . 30,173 parts In-Stock

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S.R.D Solutions

India . 27,000 parts In-Stock

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27,000

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Robosynatics

Brazil . 25,546 parts In-Stock

1+ parts

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100+ parts

$0.426

1k+ parts

$0.418

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$0.418

25,546

-

$0.426

$0.418

$0.418

Lucentia Tech

USA . 25,546 parts In-Stock

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$0.426

1k+ parts

$0.418

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$0.418

25,546

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$0.426

$0.418

$0.418

QUARKTWIN TECHNOLOGY LTD

USA . 7,313 parts In-Stock

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7,313

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A-Z Elektronik GmbH

Germany . 2,847 parts In-Stock

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2,847

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Lixinc

USA . 2,478 parts In-Stock

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2,478

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Alle Elektronik GmbH

Germany . 1,898 parts In-Stock

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1,898

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GreenTree Electronics

Israel . 995 parts In-Stock

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995

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Overview

Experience the power of excellence with the IRF1404PBF by Infineon Technologies. As a leading manufacturer in the industry, Infineon Technologies delivers top-quality power field effect transistors. With its N-channel configuration and built-in diode, this transistor is perfect for switching applications. Its high breakdown voltage of 40V ensures reliable performance, while its rectangular package shape and through-hole terminal form make installation a breeze. The IRF1404PBF offers unparalleled value, providing maximum pulsed drain current of 808A and a powerful avalanche energy rating of 620mJ. Say goodbye to overheating worries with its maximum power dissipation of 333W. Don't miss out on the advantages and benefits that the IRF1404PBF brings to your projects. Upgrade to excellence today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor durable and resistant to impact or environmental damage.

Polarity or Channel Type: N-CHANNEL

N-Channel transistors generally have higher mobility and lower resistance compared to P-Channel transistors, making them ideal for high-performance applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for easier circuit design and protection against reverse current.

Transistor Application: SWITCHING

Designed for switching applications, this FET provides fast switching times and efficient power management.

Minimum DS Breakdown Voltage: 40 V

With a minimum breakdown voltage of 40V, this FET can handle higher voltages without breakdown or damage.

Package Shape: RECTANGULAR

The rectangular package shape provides ease of mounting and efficient use of space in circuit designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and reliable connection to the circuit board.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for precise control over the transistor's conductivity, making it suitable for a wide range of applications.

Maximum Pulsed Drain Current (IDM): 808 A

The high maximum pulsed drain current rating of 808A ensures that the FET can handle sudden surges in current without damage.

Avalanche Energy Rating (EAS): 620 mJ

The high avalanche energy rating of 620mJ makes the FET suitable for applications where there may be voltage spikes or inductive loads.

Maximum Drain Current (Abs) (ID): 202 A

The maximum drain current rating of 202A allows the FET to handle high current loads without overheating or failure.

No. of Terminals: 3

Three terminals provide a simple and efficient connection to the circuit, reducing complexity in circuit design.

Maximum Power Dissipation (Abs): 333 W

The high power dissipation rating of 333W ensures that the FET can handle high power loads without overheating or damage.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides secure mounting and efficient heat dissipation, making it suitable for high-power applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high performance and reliability in a wide range of operating conditions.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175 °C, this FET can operate reliably in high-temperature environments.

Transistor Element Material: SILICON

Silicon material provides high efficiency and durability, making the FET suitable for long-term use in various applications.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature of -55 °C ensures that the FET can operate in cold environments without performance degradation.

Maximum Drain Current (ID): 75 A

The maximum drain current of 75A allows the FET to handle high current loads efficiently and reliably.

Maximum Drain-Source On Resistance: 0.004 ohm

The low drain-source on-resistance of 0.004 ohm ensures minimal power loss and high efficiency in the FET's operation.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and connection, reducing complexity in circuit layouts.

Case Connection: DRAIN

Drain case connection provides easy and efficient heat dissipation, ensuring the FET can operate at optimal temperatures.

Technical Specifications

Power Field Effect Transistors (FET) IRF1404PBF attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Additional Features:

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Avalanche Energy Rating (EAS):

620 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (Abs) (ID):

202 A

Maximum Drain Current (ID):

75 A

Maximum Drain-Source On Resistance:

.004 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

808 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IRF1404PBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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