Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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Infineon's IPA60R080P7XKSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for SWITCHING applications. Featuring 110A IDM and 0.08 ohm RDS(on), it operates in ENHANCEMENT MODE with 118mJ EAS. The PLASTIC/EPOXY package has RECTANGULAR shape, THROUGH-HOLE terminals, and ISOLATED case connection.
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$4.680
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$4.910
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DigiKey
$5.060
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Newark
$5.540
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Element14
$7.880
$3.950
$2.670
Rochester
$1.670
$1.570
Verical
$2.087
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Digiode
$2.014
Rutronik
$1.750
Nova Conductors
Vyrian
Aztec Data Supply Inc.
$0.435
Ampacity Inc.
$1.800
Semicontronic
$1.755
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Corphita
$1.908
Component Stockers USA
$2.720
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Continental Prestige Electronics
$3.670
$2.710
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Modulus Dynamics
$4.180
$4.013
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Corohmni
Microchip USA
$16.772
Lixinc
Argo Parts USA
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Aranea Global
The plastic/epoxy material used in the package body provides durability and protection for the internal components of the power FET, making it suitable for various applications.
N-channel FETs are known for their high efficiency and fast switching speeds, making them ideal for applications where power efficiency is crucial.
With a high minimum breakdown voltage of 600V, this power FET can handle high voltage levels, making it suitable for a wide range of applications where high voltage operation is required.
The high maximum pulsed drain current rating of 110A allows this power FET to handle high current spikes, making it suitable for applications that require high power handling capabilities.
The high avalanche energy rating of 118 mJ indicates that this power FET can withstand energy surges without damage, making it reliable in applications where transient over-voltages may occur.
The low drain-source on resistance of 0.08 ohm results in reduced conduction losses and improved efficiency in power switching applications, making this FET a high-performance choice.
Power Field Effect Transistors (FET) IPA60R080P7XKSA1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Infineon Technologies
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JESD-609 Code:
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IPA60R080P7XKSA1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
2N2222A
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Maximum Operating Temperature: 150 Cel;
1N4148
Semitronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
North American Philips Discrete Products Div
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
NE555D
SQUARE; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: LSOP; Package Shape: RECTANGULAR; Surface Mount: YES;
2N7002
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Time At Peak Reflow Temperature (s): 30; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BSS84-7-F
SPC TECHNOLOGY/ MULTICOMP
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;
BAV99
Continental Device India
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
SMMBT2222ALT1G
Onsemi
SMMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, 0.6A IC, and 40V VCE. It has a hFE of 75, fT of 300MHz, and operates up to 150°C. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance.
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; No. of Elements: 1; Transistor Application: SWITCHING;
Multicomp Pro
DS18B20Z+T&R
Analog Devices
DS18B20Z+T&R by Analog Devices is a 12-bit temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, offering ±0.5°C accuracy. The sensor comes in a plastic package suitable for surface mount applications, with a max supply voltage of 5.5V and min of 3V.
Jgd Semiconductors
RECTIFIER DIODE; Surface Mount: YES; Maximum Reverse Recovery Time: .006 us; Maximum Repetitive Peak Reverse Voltage: 70 V; Maximum Forward Voltage (VF): 1 V; Maximum Operating Temperature: 150 Cel;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): .115 A;
KSZ9031RNXIC
Microchip Technology
KSZ9031RNXIC by Microchip Technology is a network interface chip with 1 transceiver. It operates at a data rate of 1000 Mbps and has a nominal voltage of 1.2V. This chip is commonly used in industrial applications requiring Ethernet connectivity.
Gulf Semiconductor
M39029/58-360
Carlisle Interconnect Technologies
GENERAL CONN ACCESSORY; Associated Military - Specifications: MIL-C-55302/69, MIL-C-38999; Maximum Operating Temperature: 200 Cel; MIL-Connector Accessory: CONTACT; Terminal Type: CRIMP; MIL Conformity: YES;
Vishay Sprague
NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; JEDEC-95 Code: TO-18; Maximum Collector-Emitter Voltage: 40 V;
LM317T
Integrated Power Semiconductors
Other Regulators; No. of Terminals: 3; Operating Temperature (TJ-Min): 0 Cel; Terminal Pitch: 2.54 mm; Maximum Load Regulation (%): 1.5 %; Nominal Dropout Voltage-1: 3 V;
ULN2803A
Texas Instruments
ULN2803A by Texas Instruments is a peripheral driver with 8 functions. It has a max supply voltage of 3V and can operate in temperatures ranging from -40 to 85°C. This IC is commonly used as a buffer or inverter based peripheral driver for various applications.
Allegro MicroSystems
RECTIFIER DIODE; Terminal Position: END; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
FDV301N-NB9V008
FDV301N-NB9V008 by Fairchild Semiconductor is a N-CHANNEL FET with 0.5A max drain current and 0.35W max power dissipation in enhancement mode. Ideal for surface mount applications, it operates at up to 150°C making it suitable for various power management circuits.
BSC060N10NS3GATMA1/SAMPLE
Infineon Technologies
BSC060N10NS3GATMA1/SAMPLE by Infineon is a N-CHANNEL FET with PLASTIC/EPOXY package, ideal for SWITCHING applications. It features SINGLE configuration with built-in DIODE and METAL-OXIDE SEMICONDUCTOR technology. This 8-terminal transistor has RECTANGULAR shape, DUAL position terminals, and DRAIN case connection for surface mount use.
CSD18531Q5AT
CSD18531Q5AT by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It has a 60V DS Breakdown Voltage, 19A Drain Current, and 0.0058 ohm On Resistance. With an operating range of -55 to 150 °C, it's ideal for power management in various electronic devices.
FDMC5614P
FDMC5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage and 23A IDM. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a SQUARE PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 6W at 150°C.
CSD19537Q3T
CSD19537Q3T by Texas Instruments is an N-CHANNEL FET for SWITCHING applications. It features a Max Pulsed Drain Current of 219A, Min DS Breakdown Voltage of 100V, and Max Operating Temperature of 150°C. This SINGLE configuration transistor has a Surface Mount design with METAL-OXIDE SEMICONDUCTOR technology.
SI7489DP-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SI7489DP-T1-GE3 is a P-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 40A IDM, 61mJ EAS, and 0.041 ohm Drain-Source On Resistance. Operating in Enhancement Mode, it has a max temp of 150°C and -55°C min temp.
SCT2080KEC
ROHM
ROHM's SCT2080KEC is a N-CHANNEL Power FET with 1200V DS Breakdown Voltage. Ideal for SWITCHING applications, it has a max Drain Current of 40A and On Resistance of 0.117 ohm. Operating in ENHANCEMENT MODE, it can handle up to 80A Pulsed Drain Current and dissipate 262W power at max.
IRLML6401TRPBF-1
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Minimum Operating Temperature: -55 Cel; No. of Elements: 1;
IRF9540PBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Operating Temperature: 175 Cel; Maximum Drain Current (ID): 19 A;
FDN5618P_NL
Fairchild Semiconductor's FDN5618P_NL is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a Max Drain Current of 1.25A and 0.17 ohm On Resistance. The transistor operates in ENHANCEMENT MODE, has a Max Power Dissipation of 0.5W, and can handle up to 10A Pulsed Drain Current.
BSZ097N04LSGATMA1
Infineon BSZ097N04LSGATMA1 is a N-CHANNEL FET with 40V DS breakdown voltage, ideal for SWITCHING applications. Features include 160A IDM, 0.0142 ohm RDS(on), and 20mJ EAS rating. Operates in ENHANCEMENT MODE up to 175°C, with PLASTIC/EPOXY package and DUAL terminal position.
IRF7328TRPBF
Infineon's IRF7328TRPBF is a P-CHANNEL FET for SWITCHING applications. It features 30V DS Breakdown Voltage, 32A IDM, and 0.021 ohm RDS(on). With a max power dissipation of 2W and operating temperature up to 150°C, it's ideal for high-performance electronic systems requiring efficient power management in compact designs.
BSP320SH6327XTSA1
Infineon's BSP320SH6327XTSA1 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage. It features 11.6A IDM, 0.12 ohm RDS(on), and 150°C Max Operating Temp. Ideal for automotive applications due to AEC-Q101 compliance, it offers high efficiency in compact designs with its small outline package and built-in diode configuration.
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-30 Code: S-PDSO-F5;
IRLML2502
IRLML2502 by International Rectifier is a N-CHANNEL FET with 20V DS breakdown voltage and 4.2A max drain current, ideal for switching applications. It features a built-in diode, operates in enhancement mode, and has a max power dissipation of 1.3W. This MOSFET is surface mountable with GULL WING terminals and can handle up to 33A pulsed drain current.
IRFHS9301TRPBF
Infineon's IRFHS9301TRPBF is a P-CHANNEL FET with 30V DS Breakdown Voltage, 6A ID, and 0.037 ohm RDS(on). Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation in a SMALL OUTLINE package with DUAL terminals.
NDT2955_NL
Fairchild Semiconductor's NDT2955_NL is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 15A IDM, 174mJ EAS, and 0.3 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max temp of 150°C and comes in a SMALL OUTLINE package.
AUIRFZ44N
AUIRFZ44N by Infineon Technologies is a power FET with N-channel polarity. It has a min DS breakdown voltage of 55V and can handle a max pulsed drain current of 160A. This transistor is commonly used for switching applications.
IRF540PBF
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum DS Breakdown Voltage: 100 V; Transistor Element Material: SILICON; Package Shape: RECTANGULAR;
IRFZ44NLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier; No. of Terminals: 3;
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IPA60R099C6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 112 A; JEDEC-95 Code: TO-220AB; Operating Mode: ENHANCEMENT MODE;
IPA60R190C6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 59 A; Transistor Application: SWITCHING; Terminal Finish: TIN;
IPA60R280P6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 32 W; No. of Terminals: 3; Transistor Application: SWITCHING;
IPA65R190CFDXKSA1
Infineon's IPA65R190CFDXKSA1 is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 57.2A IDM, 484mJ EAS, and 0.19 ohm RDS(ON). Operating from -55 to 150 °C, it has a max power dissipation of 34W in a RECTANGULAR package with THROUGH-HOLE terminals.
IPA60R600P7SXKSA1
Infineon's IPA60R600P7SXKSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Featuring 16A IDM and 0.6 ohm RDS(on), it operates in enhancement mode with 17mJ EAS. The transistor has a plastic/epoxy body, through-hole terminals, and silicon element material for efficient performance.
IPA60R280CFD7XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Minimum Operating Temperature: -55 Cel; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
IPA60R170CFD7XKSA1
Infineon Technologies' IPA60R170CFD7XKSA1 is a power FET with a min DS breakdown voltage of 600V. It has a max pulsed drain current of 51A and an avalanche energy rating of 60mJ. This N-channel transistor is commonly used for switching applications.
IPA60R099P6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 34 W; Operating Mode: ENHANCEMENT MODE; Case Connection: ISOLATED;
IPA60R280P6
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 32 W; Maximum Drain Current (ID): 13.8 A; Minimum DS Breakdown Voltage: 600 V;
IPA60R180P7SXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Terminal Position: SINGLE; Transistor Application: SWITCHING;
IPA600N25NM3SXKSA1
Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Finish: Tin (Sn); JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
IPA60R170CFD7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 26 W; Terminal Finish: TIN; Case Connection: ISOLATED;
IPA60R060C7XKSA1
Infineon's IPA60R060C7XKSA1 is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring a 135A IDM and 0.06 ohm RDS(on), it operates in ENHANCEMENT MODE. The transistor's SILICON element and 159mJ EAS make it suitable for high-power tasks.
IPA60R099C7XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Avalanche Energy Rating (EAS): 97 mJ; Minimum DS Breakdown Voltage: 600 V; Transistor Application: SWITCHING;
IPA60R125CPXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Shape: RECTANGULAR; Case Connection: ISOLATED; Minimum DS Breakdown Voltage: 600 V;
IPA60R280P7SXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain-Source On Resistance: .28 ohm; Maximum Pulsed Drain Current (IDM): 36 A; Transistor Application: SWITCHING;
IPA60R360P7XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; No. of Terminals: 3; Avalanche Energy Rating (EAS): 27 mJ;
IPA65R099C6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: SINGLE; Transistor Element Material: SILICON; Package Shape: RECTANGULAR;
IPA65R150CFDXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 34.7 W; JESD-609 Code: e3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
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