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IKB40N65EF5ATMA1

Infineon Technologies

IKB40N65EF5ATMA1 by Infineon Technologies

Infineon's IKB40N65EF5ATMA1 is an N-CHANNEL IGBT with 650V max collector-emitter voltage and 74A max collector current. Ideal for power control applications, it features a built-in diode, 199ns turn-off time, and operates b/w -40°C to 175°C.

Median Price

$4.795

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 865 parts In-Stock

1+ parts

$2.490

100+ parts

-

1k+ parts

-

10k+ parts

-

865

$2.490

-

-

-

Newark

USA . 19 parts In-Stock

1+ parts

$4.720

100+ parts

$2.910

1k+ parts

$2.630

10k+ parts

-

19

$4.720

$2.910

$2.630

-

DigiKey

USA . 1,036 parts In-Stock

1+ parts

$4.870

100+ parts

$2.297

1k+ parts

$1.772

10k+ parts

$1.767

1,036

$4.870

$2.297

$1.772

$1.767

Arrow

USA . 75 parts In-Stock

1+ parts

$5.449

100+ parts

$2.784

1k+ parts

$2.347

10k+ parts

$2.317

75

$5.449

$2.784

$2.347

$2.317

Mouser Electronics

USA . 324 parts In-Stock

1+ parts

$5.460

100+ parts

$2.790

1k+ parts

$2.050

10k+ parts

$2.020

324

$5.460

$2.790

$2.050

$2.020

Element14

Singapore . 1,000 parts In-Stock

1+ parts

$349.510

100+ parts

$237.460

1k+ parts

$184.190

10k+ parts

-

1,000

$349.510

$237.460

$184.190

-

Verical

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$3.548

10k+ parts

-

6,000

-

-

$3.548

-

Farnell

UK . 1,000 parts In-Stock

1+ parts

-

100+ parts

$2.290

1k+ parts

$1.850

10k+ parts

-

1,000

-

$2.290

$1.850

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 571 parts In-Stock

1+ parts

$2.202

100+ parts

-

1k+ parts

-

10k+ parts

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571

$2.202

-

-

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Vyrian

USA . 655 parts In-Stock

1+ parts

$2.290

100+ parts

-

1k+ parts

-

10k+ parts

-

655

$2.290

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 1,645 parts In-Stock

1+ parts

$1.726

100+ parts

$1.657

1k+ parts

$1.588

10k+ parts

-

1,645

$1.726

$1.657

$1.588

-

Corphita

USA . 492 parts In-Stock

1+ parts

$2.086

100+ parts

-

1k+ parts

-

10k+ parts

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492

$2.086

-

-

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Microchip USA

USA . 5,140 parts In-Stock

1+ parts

$20.907

100+ parts

-

1k+ parts

-

10k+ parts

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5,140

$20.907

-

-

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QUARKTWIN TECHNOLOGY LTD

USA . 26,677 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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26,677

-

-

-

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Continental Prestige Electronics

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

$3.030

1k+ parts

$2.550

10k+ parts

-

1,000

-

$3.030

$2.550

-

Overview

Discover the power and reliability of the IKB40N65EF5ATMA1 Insulated Gate Bipolar Transistor by Infineon Technologies. Known for their superior quality and innovative technology, Infineon sets the standard in the industry. This N-CHANNEL transistor with built-in diode is perfect for power control applications, offering fast turn-off and turn-on times for optimal performance. With a maximum operating temperature of 175°C and a collector-current rating of 74A, this transistor provides unmatched value and efficiency. Trust Infineon for all your power control needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Polarity or Channel Type: N-CHANNEL

Offers efficient power control and operation in various applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and saves space by integrating a diode within the transistor.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring optimal performance and reliability.

Surface Mount: YES

Ideal for automated assembly processes and compact designs, saving time and space during installation.

Package Shape: RECTANGULAR

Facilitates easy placement and mounting on circuit boards, improving overall accessibility and connectivity.

Nominal Turn Off Time (toff): 199 ns

Fast turn-off time enhances efficiency and responsiveness in power control operations.

No. of Terminals: 2

Simplifies connection and installation process, reducing complexity in circuit design.

Maximum Operating Temperature: 175 °C

High operating temperature range ensures stability and reliability in various environmental conditions.

Maximum Collector-Emitter Voltage: 650 V

Capable of handling high voltage levels, making it suitable for power control applications.

Transistor Element Material: SILICON

Provides high efficiency and performance, making it a reliable choice for power control applications.

Minimum Operating Temperature: -40 °C

Wide temperature range allows for operation in extreme conditions without compromising performance.

Maximum Collector Current (IC): 74 A

High collector current rating enables the transistor to handle large power loads efficiently.

Terminal Finish: TIN

Provides a reliable electrical connection, ensuring stable performance over time.

Terminal Position: SINGLE

Simplifies the connection process and offers easy integration into existing circuit designs.

Case Connection: COLLECTOR

Facilitates efficient heat dissipation, ensuring the transistor operates within safe temperature limits.

Peak Reflow Temperature °C: 260

Capable of withstanding high reflow temperatures during assembly processes, ensuring product reliability.

Nominal Turn On Time (ton): 57 ns

Fast turn-on time enhances responsiveness and efficiency in power control operations.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IKB40N65EF5ATMA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

650 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

199 ns

Nominal Turn On Time (ton):

57 ns

Trade Compliance

IKB40N65EF5ATMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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