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CMY211

Infineon Technologies

CMY211 by Infineon Technologies

Infineon's CMY211 is a GAAS double balanced mixer with 50 ohm impedance. It operates from 500 MHz to 2500 MHz, handling up to 17 dBm CW input power. This RF component, featuring a surface mount package, is ideal for various applications requiring high-frequency mixing capabilities.

Median Price

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Lifecycle Status

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4

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1k+

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Odintec Ltd.

Israel . 1,300 parts In-Stock

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Digiode

USA . 947 parts In-Stock

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Vyrian

USA . 196 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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Modulus Dynamics

Lithuania . 4,771 parts In-Stock

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$2.305

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$2.213

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$2.121

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AZTECH Wire

Italy . 763 parts In-Stock

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Ampacity Inc.

Singapore . 1,556 parts In-Stock

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$15.000

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Kepictronics

USA . 33,000 parts In-Stock

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Authorized Procurement Solutions

USA . 22,000 parts In-Stock

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Continental Prestige Electronics

USA . 5,876 parts In-Stock

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Argo Parts USA

USA . 4,104 parts In-Stock

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Assy Fe

Spain . 1,850 parts In-Stock

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Corphita

USA . 51 parts In-Stock

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Aranea Global

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Overview

Discover the cutting-edge CMY211 by Infineon Technologies, a premium RF/Microwave Mixer designed for seamless integration and top-notch performance. Crafted with precision using GAAS technology, this component boasts a maximum input power of 17 dBm and a maximum operating frequency of 2500 MHz. With its double balanced design and low conversion loss of 7.5 dB, the CMY211 delivers unparalleled signal clarity and reliability for all your RF applications. Elevate your projects with the quality and expertise of Infineon Technologies, setting the standard for excellence in the industry. Experience the difference with the CMY211 - where innovation meets perfection.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and reliability for the product, making it suitable for a variety of applications.

Maximum Input Power (CW): 17 dBm

The high maximum input power allows for efficient operation and handling of high power signals without risk of damage.

Construction: COMPONENT

The use of components in the construction ensures high quality and performance of the mixer.

Power Supplies (V): 3

The low power supply requirement of 3V makes this product energy efficient and cost-effective.

No. of Terminals: 5

Having 5 terminals allows for versatile connectivity options and flexibility in circuit design.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead finish on the terminals ensures good conductivity and solderability for easy integration into circuits.

Technology: GAAS

The Gallium Arsenide (GaAs) technology used in this mixer offers high performance and reliability in RF/microwave applications.

RF or Microwave Device Type: DOUBLE BALANCED

The double balanced design helps in reducing unwanted signals and noise, resulting in cleaner and more accurate signal processing.

Characteristic Impedance: 50 ohm

The 50 ohm characteristic impedance ensures optimal signal transfer and compatibility with standard RF systems.

Maximum Conversion Loss: 7.5 dB

The low maximum conversion loss of 7.5 dB indicates efficient signal conversion with minimal signal loss.

Minimum Operating Frequency: 500 MHz

The wide minimum operating frequency range of 500 MHz allows for versatility in application across different frequency bands.

Mounting Feature: SURFACE MOUNT

The surface mount feature makes installation and integration of the mixer easier and more convenient in various circuit layouts.

Maximum Operating Frequency: 2500 MHz

The high maximum operating frequency of 2500 MHz enables the mixer to handle a wide range of RF and microwave signals with accuracy and precision.

Technical Specifications

RF/Microwave Mixers CMY211 attributes and parameters. Explore more RF/Microwave Mixers devices from Infineon Technologies

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Maximum Conversion Loss:

7.5 dB

Maximum Input Power (CW):

17 dBm

JESD-609 Code:

e0

Mounting Feature:

No. of Terminals:

5

Maximum Operating Frequency:

2500 MHz

Minimum Operating Frequency:

500 MHz

Package Body Material:

Package Equivalence Code:

TSOP5/6,.11,37

Power Supplies (V):

3

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Mixers

Technology:

Terminal Finish:

Tin/Lead (Sn/Pb)

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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