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CMY210

Infineon Technologies

CMY210 by Infineon Technologies

Infineon Technologies' CMY210 is a GAAS RF/Microwave Mixer with 17 dBm CW input power, 7 dB conversion loss, and 500-2500 MHz frequency range. Featuring a double balanced design, it's ideal for surface mount applications requiring high-frequency signal mixing in a 50 ohm system.

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Vyrian

USA . 4,337 parts In-Stock

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NexGen Digital

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Digiode

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Sogenti Electronics

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Atlantic Semiconductor

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Nova Conductors

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Prism Electronics

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Sea View Technologies

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Bristol Electronics

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Cogito LLC

Ukraine . 3 parts In-Stock

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Corohmni

South Africa . 603 parts In-Stock

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$0.872

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Ampacity Inc.

Singapore . 808 parts In-Stock

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Aztec Data Supply Inc.

USA . 124 parts In-Stock

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Modulus Dynamics

Lithuania . 625 parts In-Stock

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Semicontronic

India . 1,628 parts In-Stock

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AZTECH Wire

Italy . 258 parts In-Stock

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Continental Prestige Electronics

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Argo Parts USA

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Corphita

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Advanced Electronics

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Overview

Experience seamless integration and superior performance with the CMY210 RF/Microwave Mixer by Infineon Technologies. As a trusted manufacturer in the industry, Infineon delivers top-quality products that meet the demands of modern applications. The CMY210 offers unparalleled value with its high maximum input power, efficient construction, and wide operating frequency range. Elevate your projects with this versatile and reliable component, designed to enhance your RF and microwave systems effortlessly. Choose the CMY210 for exceptional results and unmatched benefits in your next design endeavor.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, perfect for portable or rugged applications.

Maximum Input Power (CW): 17 dBm

With a high maximum input power of 17 dBm, this mixer can handle strong input signals without distortion, ensuring reliable performance.

Construction: COMPONENT

The component construction allows for easy integration into existing RF/microwave systems, making it a flexible choice for various applications.

Power Supplies (V): 3

Operating at a low voltage of 3V, this mixer is energy-efficient and suitable for battery-operated devices.

No. of Terminals: 5

Having 5 terminals provides flexibility in connections and configurations, allowing for versatile usage in different circuit designs.

Technology: GAAS

Utilizing Gallium Arsenide (GaAs) technology ensures high performance and low noise operation, making it an ideal choice for sensitive RF applications.

RF or Microwave Device Type: DOUBLE BALANCED

Being a double balanced mixer results in improved suppression of undesired signals and better linearity, enhancing overall RF signal quality.

Characteristic Impedance: 50 ohm

Having a characteristic impedance of 50 ohms makes it compatible with standard RF systems, simplifying integration and reducing signal losses.

Maximum Conversion Loss: 7 dB

The low maximum conversion loss of 7 dB ensures efficient signal conversion with minimal loss, maintaining signal integrity.

Minimum Operating Frequency: 500 MHz

Operating at a minimum frequency of 500 MHz allows for use in a wide range of RF applications, from lower frequency to high frequency systems.

Mounting Feature: SURFACE MOUNT

The surface mounting feature simplifies the installation process and saves space, making it convenient for compact designs and mass production.

Maximum Operating Frequency: 2500 MHz

With a high maximum operating frequency of 2500 MHz, this mixer is suitable for high-frequency RF applications requiring wide bandwidth coverage.

Technical Specifications

RF/Microwave Mixers CMY210 attributes and parameters. Explore more RF/Microwave Mixers devices from Infineon Technologies

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Maximum Conversion Loss:

7 dB

Maximum Input Power (CW):

17 dBm

Mounting Feature:

No. of Terminals:

5

Maximum Operating Frequency:

2500 MHz

Minimum Operating Frequency:

500 MHz

Package Body Material:

Package Equivalence Code:

TSOP5/6,.11,37

Power Supplies (V):

3

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Mixers

Technology:

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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