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BSD840NH6327XTSA1

Infineon Technologies

BSD840NH6327XTSA1 by Infineon Technologies

Infineon's BSD840NH6327XTSA1 is a N-CHANNEL FET with 20V DS breakdown voltage, 3.5A max drain current, and 0.4 ohm on-resistance. It features separate configuration with built-in diode for enhancement mode operation. Ideal for applications requiring small outline package style and gull wing terminals in surface mount setups.

Median Price

$0.231

Lifecycle Status

Suppliers In-Stock

28

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 22 parts In-Stock

1+ parts

$0.370

100+ parts

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22

$0.370

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DigiKey

USA . 175,662 parts In-Stock

1+ parts

$0.390

100+ parts

$0.150

1k+ parts

$0.099

10k+ parts

$0.071

175,662

$0.390

$0.150

$0.099

$0.071

Newark

USA . 474 parts In-Stock

1+ parts

$0.433

100+ parts

$0.166

1k+ parts

$0.109

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474

$0.433

$0.166

$0.109

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Element14

Singapore . 100,520 parts In-Stock

1+ parts

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$0.231

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$0.125

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$0.123

100,520

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$0.231

$0.125

$0.123

Farnell

UK . 67,015 parts In-Stock

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$0.196

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$0.083

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$0.063

67,015

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$0.196

$0.083

$0.063

Verical

USA . 18,497 parts In-Stock

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$0.156

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$0.102

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$0.066

18,497

-

$0.156

$0.102

$0.066

Chip1Stop

Japan . 17,900 parts In-Stock

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$0.066

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17,900

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$0.066

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RS (Exports)

UK . 17,900 parts In-Stock

1+ parts

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$0.302

1k+ parts

$0.143

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17,900

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$0.302

$0.143

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Avnet

USA . 3,000 parts In-Stock

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$0.047

3,000

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$0.047

Distributors (In-Stock)

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Nova Conductors

Japan . 70 parts In-Stock

1+ parts

$0.131

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$0.131

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Digiode

USA . 778 parts In-Stock

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$0.323

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778

$0.323

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TME

Poland . 1 parts In-Stock

1+ parts

$0.390

100+ parts

$0.153

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$0.094

10k+ parts

$0.072

1

$0.390

$0.153

$0.094

$0.072

Vyrian

USA . 282,142 parts In-Stock

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Chip Stock

USA . 162,500 parts In-Stock

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NAC Semi

USA . 102,000 parts In-Stock

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$0.256

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$0.256

IBS Electronics

USA . 87,000 parts In-Stock

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$0.106

87,000

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$0.106

Flip Electronics

USA . 18,000 parts In-Stock

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Rutronik

Germany . 15,000 parts In-Stock

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$0.062

15,000

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$0.062

Lonics

Poland . 6,000 parts In-Stock

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Micros

Poland . 3,000 parts In-Stock

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$0.068

3,000

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$0.068

Partservice

France . 3,000 parts In-Stock

1+ parts

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100+ parts

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$0.086

10k+ parts

$0.067

3,000

-

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$0.086

$0.067

Micros sp.j. W. Kędra i J. Lic

Poland . 3,000 parts In-Stock

1+ parts

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100+ parts

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$0.092

10k+ parts

$0.072

3,000

-

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$0.092

$0.072

Bristol Electronics

USA . 2,902 parts In-Stock

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Sensible Micro Corp

USA . 327 parts In-Stock

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327

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ComSIT Distribution GmbH

Germany . 245 parts In-Stock

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VNN

France . 225 parts In-Stock

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Prism Electronics

USA . 62 parts In-Stock

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Semtec, LLC

USA . 50 parts In-Stock

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50

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Distributors (Availability)

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Ampacity Inc.

Singapore . 248,152 parts In-Stock

1+ parts

$0.035

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248,152

$0.035

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Semicontronic

India . 243,795 parts In-Stock

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$0.035

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$0.034

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$0.034

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243,795

$0.035

$0.034

$0.034

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Argo Parts USA

USA . 1,776 parts In-Stock

1+ parts

$0.131

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$0.127

1,776

$0.131

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$0.127

Netroflash

USA . 50 parts In-Stock

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$0.131

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50

$0.131

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Corphita

USA . 934 parts In-Stock

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$0.306

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934

$0.306

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Component Stockers USA

USA . 1,338,887 parts In-Stock

1+ parts

$0.340

100+ parts

$0.130

1k+ parts

$0.090

10k+ parts

$0.050

1,338,887

$0.340

$0.130

$0.090

$0.050

Continental Prestige Electronics

USA . 85,306 parts In-Stock

1+ parts

$0.351

100+ parts

$0.170

1k+ parts

$0.095

10k+ parts

$0.076

85,306

$0.351

$0.170

$0.095

$0.076

Aztec Data Supply Inc.

USA . 5,359 parts In-Stock

1+ parts

$0.560

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5,359

$0.560

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Corohmni

South Africa . 88 parts In-Stock

1+ parts

$0.794

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88

$0.794

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Modulus Dynamics

Lithuania . 19,060 parts In-Stock

1+ parts

$0.905

100+ parts

$0.869

1k+ parts

$0.833

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19,060

$0.905

$0.869

$0.833

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

1+ parts

$2.303

100+ parts

$2.096

1k+ parts

$1.888

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5,000

$2.303

$2.096

$1.888

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Andel Nordic

Denmark . 349 parts In-Stock

1+ parts

$41.690

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$29.182

10k+ parts

$29.182

349

$41.690

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$29.182

$29.182

Eastek

USA . 1,344,000 parts In-Stock

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$0.110

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1,344,000

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$0.110

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RC Electronics

USA . 73,624 parts In-Stock

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73,624

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Glotronic Ltd.

UK . 38,400 parts In-Stock

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Robosynatics

Brazil . 24,417 parts In-Stock

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24,417

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Lucentia Tech

USA . 24,417 parts In-Stock

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$1.701

1k+ parts

$1.667

10k+ parts

$1.667

24,417

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$1.701

$1.667

$1.667

Futuretech Components

Singapore . 20,000 parts In-Stock

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Formix International (Excess)

India . 18,512 parts In-Stock

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18,512

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Infinite Electronics LLP (Excess)

. 18,511 parts In-Stock

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18,511

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Epart123

USA . 18,000 parts In-Stock

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$0.350

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$0.350

18,000

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$0.350

$0.350

Perfect Parts

USA . 13,821 parts In-Stock

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13,821

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GreenTree Electronics

Israel . 6,000 parts In-Stock

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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500

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Overview

Upgrade your electronics with the BSD840NH6327XTSA1 by Infineon Technologies, a top-quality Small Signal Field Effect Transistor that offers unparalleled performance and reliability. Infineon Technologies is known for its cutting-edge technology and innovative solutions in the semiconductor industry, making this FET a smart choice for a wide range of applications. With a minimum DS breakdown voltage of 20V and a maximum drain current of 3.5A, this transistor delivers exceptional value and efficiency to customers looking for superior electronic components. Trust in the quality and expertise of Infineon Technologies for all your semiconductor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the transistor, making it a reliable choice for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have lower ON resistance and higher current-handling capabilities, making them ideal for high-performance circuits.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

The separate elements with a built-in diode offer versatility in circuit design and can help simplify the overall circuit layout.

Surface Mount: YES

Surface mount capability allows for easy and efficient assembly of the transistor onto circuit boards, saving space and reducing manufacturing costs.

Minimum DS Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20V, this transistor can handle a wide range of voltages, providing flexibility in circuit design.

Package Shape: RECTANGULAR

The rectangular package shape helps in easy placement on circuit boards and ensures efficient heat dissipation for improved performance.

Terminal Form: GULL WING

Gull wing terminals make soldering easy and secure, ensuring a reliable connection between the transistor and the circuit board.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for precise control of the transistor's conductivity, making it suitable for various analog and digital applications.

No. of Elements: 2

With two elements, this transistor can perform multiple functions within a circuit, increasing efficiency and reducing the need for additional components.

No. of Terminals: 6

The six terminals provide multiple connection points for flexibility in circuit design and making it easier to integrate the transistor into complex systems.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board and is ideal for applications where size is a critical factor.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high switching speeds and low power consumption, making this transistor suitable for high-frequency applications.

Transistor Element Material: SILICON

Silicon transistors offer high reliability, low leakage current, and high-temperature tolerance, making them ideal for a wide range of operating conditions.

Terminal Finish: TIN

The tin terminal finish provides excellent conductivity and corrosion resistance, ensuring a reliable connection over the transistor's lifespan.

Maximum Drain Current (ID): 3.5 A

With a maximum drain current of 3.5A, this transistor can handle high current loads, making it suitable for power applications.

Maximum Drain-Source On Resistance: 0.4 ohm

The low drain-source on resistance of 0.4 ohms minimizes power loss and heat generation, improving the efficiency and performance of the transistor.

Terminal Position: DUAL

Dual terminal positions offer flexibility in circuit design, allowing for easy integration into various board layouts and configurations.

Technical Specifications

Small Signal Field Effect Transistors (FET) BSD840NH6327XTSA1 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Additional Features:

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

3.5 A

Maximum Drain-Source On Resistance:

.4 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Trade Compliance

BSD840NH6327XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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