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BSD840NH6327

Infineon Technologies

BSD840NH6327 by Infineon Technologies

BSD840NH6327 by Infineon is a N-CHANNEL FET with 20V DS breakdown voltage and 0.88A max drain current. It features separate configuration, built-in diode, and operates in enhancement mode. Ideal for applications requiring small outline package style, such as power management systems.

Median Price

$0.144

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 85 parts In-Stock

1+ parts

$0.460

100+ parts

$0.194

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$0.098

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$0.068

85

$0.460

$0.194

$0.098

$0.068

Chip1Stop

Japan . 975 parts In-Stock

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$0.144

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$0.113

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Verical

USA . 975 parts In-Stock

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Digiode

USA . 722 parts In-Stock

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$0.314

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722

$0.314

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Bristol Electronics

USA . 3,000 parts In-Stock

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$0.336

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$0.168

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$0.067

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$0.050

3,000

$0.336

$0.168

$0.067

$0.050

Dan-Mar Components

USA . 94,497 parts In-Stock

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Flip Electronics

USA . 18,000 parts In-Stock

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Vyrian

USA . 11,836 parts In-Stock

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Rutronik

Germany . 9,000 parts In-Stock

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$0.057

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$0.057

Infinite Electronics LLP

India . 9,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 6,210 parts In-Stock

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ComSIT USA

USA . 6,210 parts In-Stock

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Nova Conductors

Japan . 550 parts In-Stock

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VNN

France . 70 parts In-Stock

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Prism Electronics

USA . 17 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 11,978 parts In-Stock

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$0.122

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$0.119

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$0.118

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Ampacity Inc.

Singapore . 11,859 parts In-Stock

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$0.122

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Corphita

USA . 935 parts In-Stock

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$0.297

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$0.297

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Modulus Dynamics

Lithuania . 3,714 parts In-Stock

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$0.365

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$0.350

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$0.336

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3,714

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$0.336

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Corohmni

South Africa . 78 parts In-Stock

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$1.578

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Perfect Parts

USA . 76,722 parts In-Stock

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A-Z Elektronik GmbH

Germany . 28,447 parts In-Stock

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Infinite Electronics LLP (Excess)

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Kepictronics

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Futuretech Components

Singapore . 20,000 parts In-Stock

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Lixinc

USA . 17,504 parts In-Stock

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Authorized Procurement Solutions

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Alle Elektronik GmbH

Germany . 4,977 parts In-Stock

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Continental Prestige Electronics

USA . 3,108 parts In-Stock

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Argo Parts USA

USA . 2,924 parts In-Stock

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Bastille Electronics

Australia . 450 parts In-Stock

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Overview

Experience the superior quality and performance of the BSD840NH6327 by Infineon Technologies, a leading manufacturer in the industry. This Small Signal Field Effect Transistor (FET) offers unrivaled reliability and efficiency for a wide range of applications. With its N-CHANNEL polarity and separate configuration with built-in diode, this transistor provides exceptional value and benefits to customers seeking high-quality components. Trust in the innovation and expertise of Infineon Technologies to deliver cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring a longer lifespan and reliability.

Polarity or Channel Type: N-CHANNEL

N-channel transistors are known for higher mobility and faster performance, making them suitable for various applications.

Surface Mount: YES

Surface mount technology allows for easier and more efficient PCB assembly, saving space and improving overall product design.

Minimum DS Breakdown Voltage: 20 V

The high breakdown voltage ensures the transistor can handle higher voltages without damage, increasing its versatility.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors are easier to control and require less power to operate, making them energy-efficient.

Maximum Drain Current (Abs) (ID): 0.88 A

With a high maximum drain current, this transistor can handle higher loads, making it suitable for various applications.

Maximum Power Dissipation (Abs): 0.5 W

The low power dissipation ensures the transistor operates efficiently without overheating, improving overall performance.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers high switching speeds and low on-resistance, making this transistor ideal for high-frequency applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures, ensuring reliable performance in various environments.

Maximum Drain Current (ID): 3.5 A

The high maximum drain current allows this transistor to handle heavy loads, making it suitable for power applications.

Maximum Drain-Source On Resistance: 0.4 ohm

The low on-resistance minimizes power losses and improves efficiency, making this transistor an excellent choice for high-power applications.

Terminal Position: DUAL

Dual terminal position provides flexibility in PCB layout and connections, allowing for easy integration into different circuit designs.

Technical Specifications

Small Signal Field Effect Transistors (FET) BSD840NH6327 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Infineon Technologies

Specs

Additional Features:

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

.88 A

Maximum Drain Current (ID):

3.5 A

Maximum Drain-Source On Resistance:

.4 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Trade Compliance

BSD840NH6327 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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