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BAT6405WE6327HTSA1

Infineon Technologies

BAT6405WE6327HTSA1 by Infineon Technologies

Infineon's BAT6405WE6327HTSA1 is a Schottky rectifier diode with 40V peak reverse voltage and 0.25A output current. Common cathode, dual terminal design in small outline package makes it ideal for high-speed switching applications. AEC-Q101 compliant, suitable for automotive electronics due to its fast 0.005us reverse recovery time.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,147 parts In-Stock

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VNN

France . 4,073 parts In-Stock

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4,073

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Digiode

USA . 214 parts In-Stock

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214

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Nova Conductors

Japan . 100 parts In-Stock

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Modulus Dynamics

Lithuania . 10,077 parts In-Stock

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$0.029

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$0.028

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$0.027

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10,077

$0.029

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$0.027

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$0.108

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$0.103

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$0.103

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100

$0.108

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$0.103

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Corohmni

South Africa . 833 parts In-Stock

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$0.170

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833

$0.170

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Aztec Data Supply Inc.

USA . 2,541 parts In-Stock

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$0.200

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$0.200

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Semicontronic

India . 1,148 parts In-Stock

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$1.010

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$0.985

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$0.980

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$1.010

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Ampacity Inc.

Singapore . 882 parts In-Stock

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$2.010

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$2.010

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AZTECH Wire

Italy . 269 parts In-Stock

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$11.573

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Argo Parts USA

USA . 3,180 parts In-Stock

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Continental Prestige Electronics

USA . 1,658 parts In-Stock

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Corphita

USA . 633 parts In-Stock

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Microchip USA

USA . 313 parts In-Stock

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Bastille Electronics

Australia . 200 parts In-Stock

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Robosynatics

Brazil . 100 parts In-Stock

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$1.501

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Lucentia Tech

USA . 100 parts In-Stock

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$1.501

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$1.501

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$1.501

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$1.501

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$1.501

Overview

Experience the superior quality and reliability of the BAT6405WE6327HTSA1 by Infineon Technologies. As a leading manufacturer in the industry, Infineon Technologies delivers cutting-edge diodes and rectifiers that are perfect for a wide range of applications. Whether you're looking for high-performance components for automotive, industrial, or consumer electronics, this product has you covered. Trust in the value, benefits, and advantages that Infineon Technologies brings to the table with the BAT6405WE6327HTSA1. Elevate your projects with this innovative solution today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the diodes, making them suitable for a wide range of applications.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for easy integration in circuits and provides efficient current flow.

Surface Mount: YES

Surface mount capability enables easy and secure installation on PCBs, saving space and facilitating automated production processes.

Maximum Reverse Recovery Time: 0.005 us

Fast reverse recovery time ensures minimal energy loss and efficient performance in high-speed switching applications.

Package Shape: RECTANGULAR

Rectangular package shape facilitates easy mounting and placement on circuit boards, optimizing space utilization.

No. of Terminals: 3

Having 3 terminals allows for flexible connectivity options and enables precise control over the diode's operation.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space, making it ideal for compact electronic devices with limited board space.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, the diodes can withstand elevated temperatures without compromising performance.

Terminal Position: DUAL

Dual terminal position enhances connectivity and allows for secure attachment to circuit boards, reducing the risk of disconnection.

Maximum Power Dissipation: 0.25 W

The low power dissipation of 0.25 W helps in efficient energy management and prevents overheating during operation.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 ensures the diodes meet stringent automotive industry standards for reliability and performance.

Diode Type: RECTIFIER DIODE

Rectifier diodes are ideal for converting AC to DC, making them essential components in power supply circuits.

Maximum Output Current: 0.25 A

The maximum output current of 0.25 A indicates the diodes' capability to handle moderate electrical loads with efficiency.

Technology: SCHOTTKY

Schottky technology offers lower forward voltage drop and faster switching speed, making the diodes suitable for high-frequency applications.

Terminal Form: GULL WING

Gull wing terminal form provides mechanical strength and stability during soldering, ensuring reliable connection to circuit boards.

No. of Elements: 2

Having 2 elements allows for more precise control over current flow and enables the diodes to handle a variety of voltage levels.

Maximum Repetitive Peak Reverse Voltage: 40 V

With a maximum repetitive peak reverse voltage of 40 V, the diodes can withstand reverse voltage spikes without breakdown.

Diode Element Material: SILICON

Silicon diode element material offers reliable performance and high efficiency in rectification applications, making the product a durable choice.

Technical Specifications

Diodes & Rectifiers BAT6405WE6327HTSA1 attributes and parameters. Explore more Diodes & Rectifiers devices from Infineon Technologies

Specs

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-PDSO-G3

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.25 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.25 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Recovery Time:

.005 us

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

BAT6405WE6327HTSA1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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