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BAT60AE6327XT

Infineon Technologies

BAT60AE6327XT by Infineon Technologies

BAT60AE6327XT by Infineon Technologies is a Schottky rectifier diode with 10V peak reverse voltage and 3A output current. It operates b/w -55 to 85°C, has a max power dissipation of 1.35W, and is AEC-Q101 compliant. Ideal for automotive applications due to its small outline package and matte tin terminal finish.

Median Price

$0.066

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 63,000 parts In-Stock

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$0.066

63,000

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$0.066

Distributors (In-Stock)

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Nova Conductors

Japan . 870 parts In-Stock

1+ parts

$0.157

100+ parts

-

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870

$0.157

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Digiode

USA . 930 parts In-Stock

1+ parts

$0.304

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930

$0.304

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Vyrian

USA . 36,411 parts In-Stock

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36,411

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VNN

France . 3,523 parts In-Stock

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3,523

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A2Z Electronics, Inc.

USA . 3,000 parts In-Stock

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3,000

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Q Components

USA . 3,000 parts In-Stock

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3,000

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Distributors (Availability)

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Ampacity Inc.

Singapore . 36,152 parts In-Stock

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$0.056

100+ parts

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36,152

$0.056

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Semicontronic

India . 35,973 parts In-Stock

1+ parts

$0.056

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$0.055

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$0.054

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-

35,973

$0.056

$0.055

$0.054

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Modulus Dynamics

Lithuania . 30,760 parts In-Stock

1+ parts

$0.062

100+ parts

$0.060

1k+ parts

$0.057

10k+ parts

-

30,760

$0.062

$0.060

$0.057

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Advanced Electronics

New Zealand . 200 parts In-Stock

1+ parts

$0.096

100+ parts

$0.091

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$0.091

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200

$0.096

$0.091

$0.091

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Aztec Data Supply Inc.

USA . 3,358 parts In-Stock

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$0.140

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3,358

$0.140

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Continental Prestige Electronics

USA . 1,687 parts In-Stock

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$0.157

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$0.154

1,687

$0.157

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$0.154

Argo Parts USA

USA . 298 parts In-Stock

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$0.157

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$0.152

298

$0.157

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$0.152

Corohmni

South Africa . 566 parts In-Stock

1+ parts

$0.159

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566

$0.159

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Corphita

USA . 45 parts In-Stock

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$0.288

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45

$0.288

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Netroflash

USA . 500 parts In-Stock

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$0.154

1k+ parts

$0.149

10k+ parts

$0.146

500

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$0.154

$0.149

$0.146

Overview

Experience unmatched quality and reliability with the BAT60AE6327XT by Infineon Technologies. As a leading manufacturer in the industry, Infineon ensures top-notch performance and durability in their products. This Schottky rectifier diode is ideal for a wide range of applications, offering a maximum output current of 3A and a maximum power dissipation of 1.35W. With a small outline package style and dual terminal position, this diode provides easy installation and efficient operation. Trust in the value and benefits that the BAT60AE6327XT brings to your projects, delivering exceptional results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this diode sturdy and durable.

Config: SINGLE

The single configuration simplifies circuit design and installation.

Surface Mount: YES

The surface mount capability allows for easy integration onto PCBs.

Maximum Reverse Current: 2600 uA

The low reverse current ensures efficient performance.

Package Shape: RECTANGULAR

The rectangular shape provides easy placement and soldering.

No. of Terminals: 2

The two terminals make for a straightforward connection process.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB.

Maximum Operating Temperature: 85 °C

The high operating temperature range ensures reliable performance in various conditions.

Minimum Operating Temperature: -55 °C

The low operating temperature range allows for use in extreme environments.

Terminal Finish: MATTE TIN

The matte tin finish offers good conductivity and solderability.

Terminal Position: DUAL

The dual terminal position provides flexibility in circuit layout.

Maximum Power Dissipation: 1.35 W

The high power dissipation capability allows for handling a range of currents.

Reference Standard: AEC-Q101

The AEC-Q101 compliance ensures quality and reliability for automotive applications.

Diode Type: RECTIFIER DIODE

The rectifier diode type is ideal for converting AC to DC in various electronic devices.

Maximum Forward Voltage (VF): 0.37 V

The low forward voltage drop minimizes power loss in the circuit.

Maximum Output Current: 3 A

The high output current rating allows for use in demanding applications.

Technology: SCHOTTKY

The Schottky technology ensures fast switching and low power loss.

Terminal Form: GULL WING

The gull wing terminal form facilitates easy soldering onto the PCB.

Maximum Repetitive Peak Reverse Voltage: 10 V

The high reverse voltage rating provides reliable reverse protection.

Maximum Non Repetitive Peak Forward Current: 5 A

The high peak forward current rating allows for handling short-term overloads.

Diode Element Material: SILICON

The silicon diode element material offers high conductivity and durability.

Technical Specifications

Diodes & Rectifiers BAT60AE6327XT attributes and parameters. Explore more Diodes & Rectifiers devices from Infineon Technologies

Specs

Application:

GENERAL PURPOSE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.37 V

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

5 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

1.35 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

10 V

Maximum Reverse Current:

2600 uA

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BAT60AE6327XT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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