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BAT6404WE6327HTSA1

Infineon Technologies

BAT6404WE6327HTSA1 by Infineon Technologies

Infineon's BAT6404WE6327HTSA1 is a Schottky rectifier diode with 40V peak reverse voltage and 0.25A output current. It features 0.005us reverse recovery time, suitable for high-speed applications in automotive electronics due to AEC-Q101 compliance. The small outline package with gull wing terminals makes it ideal for surface mount designs requiring compact form factor.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,448 parts In-Stock

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Nova Conductors

Japan . 700 parts In-Stock

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700

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VNN

France . 474 parts In-Stock

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474

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Digiode

USA . 428 parts In-Stock

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428

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Distributors (Availability)

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Corohmni

South Africa . 443 parts In-Stock

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$0.043

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443

$0.043

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

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$0.092

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$0.087

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$0.087

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$0.092

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$0.087

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Aztec Data Supply Inc.

USA . 2,070 parts In-Stock

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$0.130

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$0.130

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Modulus Dynamics

Lithuania . 24,266 parts In-Stock

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$0.176

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$0.169

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$0.162

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24,266

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Semicontronic

India . 1,257 parts In-Stock

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$1.010

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$0.985

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$0.980

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$1.010

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Ampacity Inc.

Singapore . 823 parts In-Stock

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$1.010

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823

$1.010

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AZTECH Wire

Italy . 770 parts In-Stock

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$10.896

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Component Stockers USA

USA . 481 parts In-Stock

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$99.990

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Continental Prestige Electronics

USA . 6,122 parts In-Stock

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Argo Parts USA

USA . 1,808 parts In-Stock

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Robosynatics

Brazil . 950 parts In-Stock

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$13.836

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$13.836

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$13.836

950

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$13.836

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$13.836

Lucentia Tech

USA . 950 parts In-Stock

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$13.836

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$13.836

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$13.836

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$13.836

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$13.836

Corphita

USA . 777 parts In-Stock

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777

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Bastille Electronics

Australia . 500 parts In-Stock

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Overview

Enhance your electronic designs with the BAT6404WE6327HTSA1 by Infineon Technologies. Known for their reliable and high-quality products, Infineon brings you a series connected, center tap diode with Schottky technology. Perfect for applications requiring fast switching speeds and low power dissipation, this rectifier diode offers a maximum output current of 0.25 A and a maximum repetitive peak reverse voltage of 40 V. Whether you're working on consumer electronics or automotive systems, this small outline package is sure to provide the performance and efficiency you need. Trust Infineon for innovation and excellence in diodes & rectifiers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for applications where weight and durability are important factors.

Maximum Reverse Recovery Time: 0.005 us

The fast reverse recovery time of 0.005 us ensures efficient and quick switching, making the product suitable for high-speed applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, the diodes can withstand higher temperatures, making them suitable for applications where heat dissipation is a concern.

Technology: SCHOTTKY

The Schottky technology provides lower forward voltage drop and faster switching speed compared to standard diodes, enhancing the efficiency and performance of the product.

Maximum Repetitive Peak Reverse Voltage: 40 V

The high maximum repetitive peak reverse voltage of 40 V ensures reliable and safe operation in applications where reverse voltage protection is critical.

Technical Specifications

Diodes & Rectifiers BAT6404WE6327HTSA1 attributes and parameters. Explore more Diodes & Rectifiers devices from Infineon Technologies

Specs

Config:

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-PDSO-G3

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.25 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.25 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Recovery Time:

.005 us

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

BAT6404WE6327HTSA1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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