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BUV23

Inchange Semiconductor

BUV23 by Inchange Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 8 MHz; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 30 A;

Median Price

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Lifecycle Status

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Digiode

USA . 6,334 parts In-Stock

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Halfin

Belgium . 250 parts In-Stock

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ECAB

Sweden . 183 parts In-Stock

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Cogito LLC

Ukraine . 30 parts In-Stock

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Fibra_Brandt Electronic GMBH

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LittleDiode

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ACDS - Activité Composants Distribution Service

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IDEA Electronic Components Group

UK . 1,291 parts In-Stock

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MKK Technologies

India . 207 parts In-Stock

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DigiPath Technology Company

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TANS Electronics

Latvia . 7,446 parts In-Stock

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Problanco Electronics

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SupplyDigital Components

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Kulean Microsystems

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Northwest PG Solutions

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UHIMA Technologies

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Corohmni

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Parana Technologies

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Assy Fe

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Technical Specifications

Power Bipolar Junction Transistors (BJT) BUV23 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Inchange Semiconductor

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

325 V

Configuration:

Minimum DC Current Gain (hFE):

8

Maximum Fall Time (tf):

400 ns

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

2900 ns

Maximum Turn On Time (ton):

800 ns

Maximum VCEsat:

1 V

Trade Compliance

BUV23 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-14-435-6112, 5961144356112

NIIN

144356112

Manufacturer Highlights

Inchange Semiconductor

Our ISC has been committed to the localization of power semiconductor devices for a long time. The product series include: bipolar transistor BJT Field Effect Transistor MOSFET SCR Thyristor Schottky rectifier diode fast recovery diode High Power Thyristors and Rectifiers and Modules RF Small Signal Transistor RF Transistor voltage regulator integrated circuit Our business started in 1991. We continue to strengthen the four advantages of "specialization, specialization and innovation", insist on the pursuit of quality and independent intellectual property rights, own two brands of isc and iscsemi, and have won more than 3,000 customers at home and abroad. We design chips, tape them out in multiple fabs, and package, test, package, and sell them ourselves. We offer over 56,000 part numbers in industry standard, specialty and custom parts. Voltage from 5V to 6000V, current from 5mA to 5000A. We continue to develop new products and have dozens of patents and high-tech products. Our products are widely used in small mobile devices to large industrial systems: automobiles and motorcycles, electronic speed control modules, medical, portable equipment, industrial equipment, consumer products, LED drivers, power switches, motor drives, rail transit, metallurgy Engineering, wind power generation, solar energy, power facilities, steelmaking, etc. In addition, we continue to manufacture and supply discontinued, hard-to-find, unpopular, and dwindling product models. Our factory is located in the innovative Wuxi New District, with complete production, testing, testing, aging, and assessment equipment. We are a high-tech enterprise in Jiangsu Province and have obtained RoHS certification, REACH certification and GB/T 19001-2016/ISO 9001: 2015 quality management system certification. We have an experienced production, design, quality and service team, and continue to provide technical support services for customers.

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