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2SK3274(L)-(2)

Hitachi

2SK3274(L)-(2) by Hitachi

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 974 parts In-Stock

1+ parts

$1.702

100+ parts

-

1k+ parts

-

10k+ parts

-

974

$1.702

-

-

-

Northwest PG Solutions

USA . 1,702 parts In-Stock

1+ parts

$1.873

100+ parts

-

1k+ parts

-

10k+ parts

-

1,702

$1.873

-

-

-

Technical Specifications

Power Field Effect Transistors (FET) 2SK3274(L)-(2) attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Hitachi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

30 A

Maximum Drain Current (ID):

30 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Trade Compliance

2SK3274(L)-(2) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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