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2SK291-T

Hitachi

2SK291-T by Hitachi

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Package Shape: ROUND; Transistor Application: AMPLIFIER;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 540 parts In-Stock

1+ parts

$0.049

100+ parts

-

1k+ parts

-

10k+ parts

$0.047

540

$0.049

-

-

$0.047

Northwest PG Solutions

USA . 2,142 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,142

-

-

-

-

Technical Specifications

Small Signal Field Effect Transistors (FET) 2SK291-T attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Hitachi

Specs

Additional Features:

LOW NOISE

Configuration:

Maximum Drain Current (ID):

.05 A

Field Effect Transistor Technology:

JUNCTION

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2SK291-T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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