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MRF6S23100HSR3

Freescale Semiconductor

MRF6S23100HSR3 by Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 330 W; Package Shape: RECTANGULAR; Package Style (Meter): FLATPACK;

Median Price

$72.675

Lifecycle Status

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6

In-Stock Inventory

1k+

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Rochester

USA . 34 parts In-Stock

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$64.600

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$57.800

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$54.400

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DigiKey

USA . 34 parts In-Stock

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Verical

USA . 34 parts In-Stock

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$80.750

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$72.250

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$68.000

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$80.750

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$68.000

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Digiode

USA . 2,537 parts In-Stock

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$68.362

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Vyrian

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Anansix

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Advanced Electronics

New Zealand . 550 parts In-Stock

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$1.709

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$1.555

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$1.401

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$1.709

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One Stop Electronics

USA . 34 parts In-Stock

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$61.170

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Corphita

USA . 332 parts In-Stock

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$64.764

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Continental Prestige Electronics

USA . 34 parts In-Stock

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$86.350

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Microchip USA

USA . 431 parts In-Stock

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$158.884

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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Perfect Parts

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UNI Independent Distributors

Spain . 1,231 parts In-Stock

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Technical Specifications

RF Power Field Effect Transistors (FET) MRF6S23100HSR3 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Freescale Semiconductor

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

68 V

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

S BAND

JESD-30 Code:

R-CDFP-F2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

225 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MRF6S23100HSR3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

Freescale Semiconductor

On December 7, 2015, NXP completed the merger with Freescale Semiconductor; the merged company continued its operation as NXP Semiconductors N.V.

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