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MRF5P21240HR6

Freescale Semiconductor

MRF5P21240HR6 by Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 603 W; Minimum DS Breakdown Voltage: 65 V; Terminal Position: DUAL;

Median Price

$156.160

Lifecycle Status

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Rochester

USA . 9 parts In-Stock

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$156.160

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$146.790

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$132.740

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DigiKey

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Digiode

USA . 4,543 parts In-Stock

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Vyrian

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Anansix

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One Stop Electronics

USA . 9 parts In-Stock

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Corphita

USA . 4,474 parts In-Stock

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Continental Prestige Electronics

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Microchip USA

USA . 6,722 parts In-Stock

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Spain . 1,837 parts In-Stock

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Technical Specifications

RF Power Field Effect Transistors (FET) MRF5P21240HR6 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Freescale Semiconductor

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

65 V

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

S BAND

JESD-30 Code:

R-CDFM-F4

No. of Elements:

2

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

200 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MRF5P21240HR6 Transistors trade compliance attributes, and parameters.

ECCN

5A991

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Freescale Semiconductor

On December 7, 2015, NXP completed the merger with Freescale Semiconductor; the merged company continued its operation as NXP Semiconductors N.V.

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