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AFV121KHSR5

Freescale Semiconductor

AFV121KHSR5 by Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum Power Gain (Gp): 18.5 dB; Terminal Form: FLAT; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

Median Price

$692.240

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5

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Rochester

USA . 30 parts In-Stock

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$692.240

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$650.710

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$609.170

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Digiode

USA . 4,777 parts In-Stock

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USA . 3,730 parts In-Stock

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Native Components

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$0.553

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Northwest PG Solutions

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$0.608

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Corohmni

South Africa . 236 parts In-Stock

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$0.943

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Advanced Electronics

New Zealand . 83 parts In-Stock

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$1.777

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$1.617

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$1.457

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One Stop Electronics

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$50.050

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Microchip USA

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Technical Specifications

RF Power Field Effect Transistors (FET) AFV121KHSR5 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Freescale Semiconductor

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

112 V

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

2.5 pF

Highest Frequency Band:

L BAND

JESD-30 Code:

R-CDFM-F4

No. of Elements:

2

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

225 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Minimum Power Gain (Gp):

18.5 dB

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

AFV121KHSR5 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

Freescale Semiconductor

On December 7, 2015, NXP completed the merger with Freescale Semiconductor; the merged company continued its operation as NXP Semiconductors N.V.

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