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HUFA76404DK8T

Fairchild Semiconductor

HUFA76404DK8T by Fairchild Semiconductor

Fairchild Semiconductor's HUFA76404DK8T is a N-CHANNEL Power FET with 62V DS Breakdown Voltage. It features 2 elements, built-in diode and resistor, for SWITCHING applications. With 3.6A Drain Current and 0.11 ohm On Resistance, it operates in ENHANCEMENT MODE at up to 150°C.

Median Price

$0.436

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Rochester

USA . 581 parts In-Stock

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$0.436

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$0.362

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$0.323

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$0.436

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$0.323

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Digiode

USA . 660 parts In-Stock

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Vyrian

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Bristol Electronics

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Atlantic Semiconductor

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Corphita

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QUARKTWIN TECHNOLOGY LTD

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Metaverse IC Inc.

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A-Z Elektronik GmbH

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Supply Digital

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Overview

Unleash the power of innovation with the HUFA76404DK8T by Fairchild Semiconductor. This N-CHANNEL Power Field Effect Transistor (FET) boasts top-notch quality and reliability, making it a standout choice for switching applications. With its separate configuration, built-in diode and resistor, and small outline package style, this transistor offers unparalleled performance and efficiency. Take your projects to the next level with the HUFA76404DK8T, delivering a maximum drain current of 3.6 A and a minimum DS breakdown voltage of 62 V. Trust Fairchild Semiconductor to provide cutting-edge technology that exceeds expectations and unlocks endless possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy packaging provides good protection for the FET, ensuring reliable performance over time.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have lower on-state resistance and higher current-carrying capacity, making them suitable for high-performance applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

Having separate elements with built-in diode and resistor allows for easier circuit design and helps in reducing external components.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient operation in such scenarios.

Surface Mount: YES

Surface mount design makes it easy to integrate the FET into compact electronic devices.

Minimum DS Breakdown Voltage: 62 V

With a high breakdown voltage, this FET can handle higher voltages without failure.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy placement on circuit boards and efficient use of space.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology ensures efficient power handling and performance.

Maximum Operating Temperature: 150 °C

Can operate efficiently at high temperatures, suitable for industrial applications where heat dissipation is crucial.

Technical Specifications

Power Field Effect Transistors (FET) HUFA76404DK8T attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Fairchild Semiconductor

Specs

Avalanche Energy Rating (EAS):

128 mJ

Minimum DS Breakdown Voltage:

62 V

Maximum Drain Current (Abs) (ID):

3.6 A

Maximum Drain Current (ID):

3.6 A

Maximum Drain-Source On Resistance:

.11 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

HUFA76404DK8T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fairchild Semiconductor

In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.

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