Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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FQB5N60C by Fairchild Semiconductor is a power field effect transistor (FET) with a min DS breakdown voltage of 600V. It is an N-channel transistor with a max pulsed drain current of 18A and a max power dissipation of 100W. This transistor is commonly used for switching applications.
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This product's plastic/epoxy package body material provides excellent protection from external elements and ensures durability, making it a reliable choice for various applications.
With its N-channel polarity or channel type, this power field effect transistor offers efficient and reliable performance in switching applications, making it suitable for a wide range of electronic devices.
The single configuration of this power FET, combined with a built-in diode, enhances convenience and simplifies circuit design, making it an ideal choice for efficient switch operations.
Designed specifically for switching applications, this power FET ensures fast and efficient switching operations, making it an optimal choice for devices that require quick response times.
With its surface mount capability, this power FET offers easy and convenient integration onto PCBs, saving space and simplifying assembly processes, making it a practical choice for modern electronic designs.
This power FET's minimum DS (Drain-Source) breakdown voltage of 600 V ensures reliable operation and protection against voltage spikes, making it suitable for high-voltage applications.
The rectangular package shape of this power FET provides compatibility with standard PCB layouts and allows for efficient use of space, making it a versatile choice for various electronic designs.
The gull wing terminal form of this power FET enables easy and secure soldering onto PCBs, ensuring reliable electrical connections, making it a practical choice for production and assembly processes.
With its enhancement mode operating mode, this power FET offers easy and precise control over switching operations, providing enhanced efficiency and performance.
This power FET consists of a single element, simplifying circuit design and reducing component count, making it an efficient and cost-effective choice for various applications.
With a maximum pulsed drain current of 18 A, this power FET can handle high-current applications reliably, making it suitable for demanding switch operations.
This power FET's high avalanche energy rating of 210 mJ enables it to withstand energy surges and improves overall robustness, providing added protection in rugged environments.
With a maximum drain current of 4.5 A, this power FET offers ample current handling capacity for various applications, ensuring stable and reliable operation.
With two terminals, this power FET provides a simple and straightforward connection interface, making it easy to integrate into circuit designs and reducing wiring complexity.
This power FET's maximum power dissipation of 100 W ensures efficient heat dissipation, allowing for continuous and reliable operation even under demanding conditions.
With its small outline package style, this power FET offers compactness and space-saving benefits, making it suitable for applications with tight size constraints.
Utilizing metal-oxide semiconductor technology, this power FET delivers excellent electrical performance, reliability, and low power consumption, making it an optimal choice for energy-efficient designs.
Designed to withstand high temperatures, this power FET ensures reliable operation even in challenging environments, making it suitable for applications where temperature fluctuations occur.
Built with silicon as the transistor element material, this power FET offers excellent thermal stability and high performance, ensuring long-term reliability and suitable for various demanding applications.
With a maximum drain-source on resistance of 2.5 ohm, this power FET minimizes voltage drops and power losses, improving overall efficiency and performance in circuit designs.
The single terminal position of this power FET allows for easy and standardized connections, simplifying circuit designs and facilitating seamless integration into various electronic systems.
The drain case connection of this power FET provides a low resistance path for current flow, ensuring efficient operation and minimizing power losses, making it an excellent choice for power-related applications.
Power Field Effect Transistors (FET) FQB5N60C attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Fairchild Semiconductor
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Maximum Drain Current (ID):
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Field Effect Transistor Technology:
JESD-30 Code:
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No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
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Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Pulsed Drain Current (IDM):
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FQB5N60C Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.
SMBJ18CA
Leshan Radio
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
M39029/56-351
Amphenol
CONNECTOR ACCESSORY; Minimum Operating Temperature: -65 Cel; Additional Features: STANDARD: MIL-DTL-38999; Contact Gender: FEMALE; MIL-Connector Accessory Name: CONTACT; Associated Military - Specifications: MIL-DTL-38999;
ERJ2RKF1002X
Panasonic
Panasonic's ERJ2RKF1002X is a fixed resistor with 10000 ohm resistance, 1% tolerance, and 0.1 W power dissipation. Ideal for surface mount applications in automotive electronics due to AEC-Q200 compliance and operating temperature range of -55 to 155 °C.
1N4148
Grande Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
NE555D
Fairchild Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
MMBT3904LT1G
Onsemi
MMBT3904LT1G by Onsemi is a NPN BJT with max. collector-emitter voltage of 40V, hFE of 30, and fT of 300MHz. Ideal for small signal applications in electronics due to its compact size, high transition frequency, and low power dissipation capabilities.
1N4148WS
Sinyork
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1 V; No. of Elements: 1; Maximum Output Current: .2 A; Config: SINGLE;
1N4148WT
Formosa Microsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Unitrode
C0603X104K5RACAUTO
KEMET Corporation
C0603X104K5RACAUTO by KEMET Corp is a ceramic capacitor with capacitance of 0.1 uF and rated DC voltage of 50 V. It has a temperature coefficient of 15% and can operate b/w -55 to 125 °C. This SMT package is commonly used in automotive applications due to its AEC-Q200 reference standard.
STM32F407VGT6
STMicroelectronics
STM32F407VGT6 by STMicroelectronics is a 32-bit microcontroller with 2/3.3V power supplies, 196608 bytes RAM, and 16-Ch 12-Bit ADC channels. It is ideal for industrial applications requiring CAN, ETHERNET, I2C(3), SPI(3), UART(2), USB(2) connectivity and features DMA(16) for efficient data transfer. With a max clock frequency of 50 MHz and operating temperature range of -40 to 85 °C, it offers high performance in a compact package style (14mm x 14mm).
MMBF170LT1G
Rochester Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 3;
B340A-13-F
Diodes Incorporated
B340A-13-F by Diodes Inc. is a Schottky rectifier diode with 40V reverse test voltage, 3A max output current, and 0.5V max forward voltage. It is used for efficiency applications in electronics due to its small outline package and high operating temperature range of -55°C to 150°C.
2N2222A
Secos
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; JEDEC-95 Code: TO-92;
Surge Components
LM317T
Sgs-ates Componenti Electronici S P A
Other Regulators; No. of Terminals: 3; JESD-609 Code: e0; Terminal Position: SINGLE; Adjustability: ADJUSTABLE; Maximum Load Regulation (%): 1.5 %;
LL4148
Good-ark Electronics
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
BAV99
NXP Semiconductors
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
ULN2803A
Vishay Intertechnology
NPN; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PDIP-T18;
Philips Components
IRFP460PBF
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Operating Mode: ENHANCEMENT MODE; Terminal Position: SINGLE;
NTD2955T4G
NTD2955T4G by Onsemi is a P-CHANNEL power FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max pulsed drain current of 18A.
IRF7507TRPBF
IRF7507TRPBF by Infineon Technologies is a Power FET with N-CHANNEL and P-CHANNEL configuration. It has a max drain current of 2.4A, on-resistance of 0.14 ohm, and operates in enhancement mode for switching applications. This transistor is designed for surface mount with a package style of small outline, making it suitable for various electronic devices requiring efficient power management.
IRFP460APBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; JESD-609 Code: e3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SI7461DP-T1-E3
Vishay Intertechnology's SI7461DP-T1-E3 is a P-CHANNEL FET with 60V DS Breakdown Voltage, 8.6A ID, and 0.0145 ohm RDS(on). Ideal for SWITCHING applications, it features a 60A IDM and 125mJ EAS in a SMALL OUTLINE package with an operating temp of 150°C.
IRFZ44NSTRLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; Maximum Drain Current (Abs) (ID): 49 A; Avalanche Energy Rating (EAS): 150 mJ;
IRLML6401TR
IRLML6401TR by International Rectifier is a P-CHANNEL FET with 12V DS Breakdown Voltage, ideal for SWITCHING applications. It features 34A IDM, 33mJ EAS, and 0.05 ohm RDS(ON). With ENHANCEMENT MODE operation and GULL WING terminals, it offers efficient performance in a SMALL OUTLINE package.
NX3008NBK,215
NX3008NBK,215 by NXP Semiconductors is an N-CHANNEL FET with a max drain current of 0.4A and power dissipation of 0.42W. Ideal for applications requiring high efficiency in power management systems due to its single configuration and enhancement mode operation at up to 150°C operating temperature.
DMPH3010LK3-13
Power Field-Effect Transistors; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Terminal Finish: MATTE TIN;
IRFP4668PBF
IRFP4668PBF by Infineon is a N-CHANNEL Power FET with 200V DS Breakdown Voltage. It has a max IDM of 520A and EAS of 760mJ, suitable for SWITCHING applications. With 0.0097 ohm RDS(on) and 520W Pdiss, it operates in ENHANCEMENT MODE at up to 175°C.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 520 W; No. of Elements: 1; Maximum Drain Current (ID): 130 A;
BSC900N20NS3GATMA1
BSC900N20NS3GATMA1 by Infineon Technologies is a power FET with N-channel polarity. It has a min DS breakdown voltage of 200V and can handle a max pulsed drain current of 61A. This transistor is commonly used for switching applications.
SI7431DP-T1-GE3
Vishay Intertechnology's SI7431DP-T1-GE3 is a P-CHANNEL FET for switching applications. Features include 200V DS breakdown voltage, 30A pulsed drain current, and 0.174 ohm max on-resistance. Ideal for high-power applications requiring efficient switching with a max operating temperature of 150°C.
BSC011N03LSIATMA1
Infineon's BSC011N03LSIATMA1 is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 400A IDM, 0.0015 ohm RDS(on), and 100mJ EAS rating. Its small outline package and DUAL terminal position make it suitable for various power management systems.
CPH6354-TL-W
Onsemi's CPH6354-TL-W is a P-CHANNEL FET with 60V DS breakdown voltage, 16A IDM, and 0.1 ohm RDS(on). Ideal for SWITCHING applications in ENHANCEMENT MODE, it features GULL WING terminals and operates in SMALL OUTLINE package style.
STW12N120K5
STW12N120K5 by STMicroelectronics is a N-CHANNEL FET with 1200V DS Breakdown Voltage, 48A IDM, and 0.69 ohm RDS. It's used for SWITCHING applications in ENHANCEMENT MODE, with 250W Pdiss and max temp of 150°C.
BSZ040N06LS5ATMA1
Infineon's BSZ040N06LS5ATMA1 is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 160A IDM, 117mJ EAS, and 0.004 ohm RDS(on). The transistor operates in ENHANCEMENT MODE and has a -55°C Min Operating Temp.
FQP27P06
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 120 W; Operating Mode: ENHANCEMENT MODE; Terminal Position: SINGLE;
FDN5618P_NL
Fairchild Semiconductor's FDN5618P_NL is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a Max Drain Current of 1.25A and 0.17 ohm On Resistance. The transistor operates in ENHANCEMENT MODE, has a Max Power Dissipation of 0.5W, and can handle up to 10A Pulsed Drain Current.
FDD8424H_F085
Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
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FQB5N90TM
FQB5N90TM by Onsemi is a N-CHANNEL Power FET with 900V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 21.6A and EAS of 660mJ, operating in ENHANCEMENT MODE at up to 150°C. This PLASTIC/EPOXY transistor has GULL WING terminals and a DRAIN connection, suitable for high-power circuits requiring efficient switching capabilities.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 158 W; Maximum Drain Current (ID): 5.4 A; Transistor Application: SWITCHING;
FQB55N10TM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 155 W; Transistor Element Material: SILICON; Terminal Position: SINGLE;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 155 W; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 2;
FQB50N06LTM
FQB50N06LTM by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 210A, EAS of 990mJ, and ID of 52.4A. With a 0.025 ohm Drain-Source Resistance, this MOSFET operates in ENHANCEMENT MODE at up to 175°C.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 121 W; Peak Reflow Temperature (C): 245; Package Shape: RECTANGULAR;
FQB50N06TM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 120 W; Package Style (Meter): SMALL OUTLINE; Maximum Time At Peak Reflow Temperature (s): 30;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 120 W; Maximum Drain-Source On Resistance: .022 ohm; JEDEC-95 Code: TO-263AB;
FQB5N60CTM_WS
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; JEDEC-95 Code: TO-263AB; JESD-609 Code: e3;
FQB5N50C
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Additional Features: FAST SWITCHING, AVALANCHE RATED; Peak Reflow Temperature (C): NOT SPECIFIED;
FQB5N50CTM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 73 W; Peak Reflow Temperature (C): 245; Terminal Finish: MATTE TIN;
FQB5N60
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 120 W; Minimum DS Breakdown Voltage: 600 V; Package Style (Meter): SMALL OUTLINE;
FQB5N15
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 54 W; Package Style (Meter): SMALL OUTLINE; Operating Mode: ENHANCEMENT MODE;
FQB5N30
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 70 W; Case Connection: DRAIN; Terminal Form: GULL WING;
FQB5N90
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 158 W; Moisture Sensitivity Level (MSL): 1; Terminal Form: GULL WING;
FQB5N15TM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 54 W; Maximum Drain-Source On Resistance: .8 ohm; Case Connection: DRAIN;
FQB5N20TM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Moisture Sensitivity Level (MSL): 1; No. of Elements: 1;
FQB5N50TM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 85 W; Transistor Element Material: SILICON; Package Shape: RECTANGULAR;
FQB5N60TM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 120 W; Package Style (Meter): SMALL OUTLINE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Terminal Position: SINGLE; Maximum Drain-Source On Resistance: 1.4 ohm;
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