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F4150R06KL4BOSA1

Eupec & Kg

F4150R06KL4BOSA1 by Eupec & Kg

N-CHANNEL; Configuration: 2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 180 A; Nominal Turn Off Time (toff): 270 ns; No. of Terminals: 24;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 3,958 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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3,958

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) F4150R06KL4BOSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Eupec & Kg

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

JESD-30 Code:

R-XUFM-X24

No. of Elements:

4

No. of Terminals:

24

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

270 ns

Nominal Turn On Time (ton):

160 ns

Trade Compliance

F4150R06KL4BOSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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