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DDB6U30N08VR

Eupec & Kg

DDB6U30N08VR by Eupec & Kg

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE, THREE PHASE DIODE BRIDGE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 26 A; Qualification: Not Qualified; Transistor Element Material: SILICON;

Median Price

$71.050

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Forefront Electronics and Design

USA . 3 parts In-Stock

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$71.050

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Digiode

USA . 775 parts In-Stock

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Vyrian

USA . 607 parts In-Stock

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 411 parts In-Stock

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$12.813

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$12.300

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$11.788

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Andel Nordic

Denmark . 3,232 parts In-Stock

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$32.750

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$22.926

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$22.926

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$32.750

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$22.926

A-Z Elektronik GmbH

Germany . 4,638 parts In-Stock

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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Northwest PG Solutions

USA . 1,486 parts In-Stock

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Native Components

USA . 808 parts In-Stock

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Corphita

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Perfect Parts

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) DDB6U30N08VR attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Eupec & Kg

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

JESD-30 Code:

R-XUFM-X9

No. of Elements:

1

No. of Terminals:

9

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

145 ns

Nominal Turn On Time (ton):

38 ns

Trade Compliance

DDB6U30N08VR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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