Loading...

DDB6U100N12RR

Eupec & Kg

DDB6U100N12RR by Eupec & Kg

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND THREE PHASE DIODE BRIDGE; Surface Mount: NO; Maximum Collector Current (IC): 50 A; Package Shape: RECTANGULAR; Qualification: Not Qualified;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) DDB6U100N12RR attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Eupec & Kg

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

JESD-30 Code:

R-XUFM-X17

No. of Elements:

1

No. of Terminals:

17

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Element Material:

SILICON

Trade Compliance

DDB6U100N12RR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.