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BSM100GAL120DLCK

Eupec & Kg

BSM100GAL120DLCK by Eupec & Kg

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 830 W; Maximum Collector Current (IC): 205 A; Qualification: Not Qualified;

Median Price

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3

In-Stock Inventory

1k+

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Vyrian

USA . 771 parts In-Stock

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771

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Digiode

USA . 476 parts In-Stock

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476

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ACDS - Activité Composants Distribution Service

France . 80 parts In-Stock

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80

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 16,214 parts In-Stock

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$1.919

100+ parts

$1.842

1k+ parts

$1.765

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16,214

$1.919

$1.842

$1.765

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Andel Nordic

Denmark . 346 parts In-Stock

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$15.430

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$10.798

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$10.798

346

$15.430

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$10.798

$10.798

Northwest PG Solutions

USA . 1,229 parts In-Stock

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$3.896

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Native Components

USA . 755 parts In-Stock

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$3.857

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755

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$3.857

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Corphita

USA . 311 parts In-Stock

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311

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) BSM100GAL120DLCK attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Eupec & Kg

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X7

No. of Elements:

1

No. of Terminals:

7

Maximum Operating Temperature:

125 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

480 ns

Nominal Turn On Time (ton):

110 ns

Maximum VCEsat:

2.6 V

Trade Compliance

BSM100GAL120DLCK Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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