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ZXTC6719MCTA

Diodes Incorporated

ZXTC6719MCTA by Diodes Incorporated

ZXTC6719MCTA by Diodes Incorporated is a Small Signal BJT with NPN and PNP channels, 2 separate elements, for switching applications. Features include 3W power dissipation, 150°C max temp, 50V max VCE, and 4A max IC. Package: SOT-23-8, surface mountable with nickel palladium gold finish.

Median Price

$0.350

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 12,380 parts In-Stock

1+ parts

$1.500

100+ parts

$0.630

1k+ parts

$0.449

10k+ parts

$0.385

12,380

$1.500

$0.630

$0.449

$0.385

Verical

USA . 12,000 parts In-Stock

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$0.275

12,000

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$0.275

DigiKey

USA . 3,002 parts In-Stock

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$0.350

3,002

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$0.350

Distributors (In-Stock)

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NAC Semi

USA . 6,000 parts In-Stock

1+ parts

-

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$0.392

6,000

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$0.392

Kruse Electronics AG

Switzerland . 3,000 parts In-Stock

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Kruse

Germany . 3,000 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

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Ampacity Inc.

Singapore . 7,010 parts In-Stock

1+ parts

$0.208

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7,010

$0.208

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Semicontronic

India . 6,272 parts In-Stock

1+ parts

$0.208

100+ parts

$0.203

1k+ parts

$0.202

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6,272

$0.208

$0.203

$0.202

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Corohmni

South Africa . 394 parts In-Stock

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$0.374

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394

$0.374

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Perfect Parts

USA . 14,103 parts In-Stock

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Eastek

USA . 6,000 parts In-Stock

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$0.380

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6,000

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$0.380

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Argo Parts USA

USA . 1,522 parts In-Stock

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1,522

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Aranea Global

USA . 1,000 parts In-Stock

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Continental Prestige Electronics

USA . 957 parts In-Stock

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957

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Overview

Enhance your electronic designs with the ZXTC6719MCTA by Diodes Incorporated, a top-quality Small Signal Bipolar Junction Transistor made from durable PLASTIC/EPOXY material. Perfect for SWITCHING applications, this NPN and PNP transistor offers reliability and efficiency with its compact rectangular package. With a maximum power dissipation of 3W and a high DC current gain of 100, this transistor can handle up to 4A of collector current at 50V. Trust in Diodes Incorporated for superior performance and innovation in semiconductor technology. Elevate your projects with the ZXTC6719MCTA and experience the difference in quality and precision.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the transistor, making it durable and reliable for long-term use.

Configuration: SEPARATE, 2 ELEMENTS

Separate, 2 element configuration allows for flexibility in circuit design and application, offering more options for customization.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and high efficiency, making it suitable for various electronic devices.

Maximum Power Dissipation (Abs): 3 W

With a maximum power dissipation of 3W, this transistor can handle high power loads without overheating, ensuring reliable performance.

Maximum Collector-Emitter Voltage: 50 V

Capable of handling a maximum collector-emitter voltage of 50V, this transistor is suitable for a wide range of voltage applications, providing versatility.

Nominal Transition Frequency (fT): 165 MHz

With a high nominal transition frequency, this transistor is capable of operating at high frequencies, making it ideal for high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZXTC6719MCTA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-N8

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

3 W

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZXTC6719MCTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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