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ZXTC2045E6TA

Diodes Incorporated

ZXTC2045E6TA by Diodes Incorporated

ZXTC2045E6TA by Diodes Inc. is a Small Signal BJT with NPN and PNP types, 2 elements, and 6 terminals. Features include hFE of 180, VCE of 30V, IC of 1.5A, and Ptot of 1.7W. Ideal for applications requiring high DC current gain in compact electronic circuits at temperatures up to 150°C.

Median Price

$0.275

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 30,027 parts In-Stock

1+ parts

$0.980

100+ parts

$0.397

1k+ parts

$0.276

10k+ parts

$0.224

30,027

$0.980

$0.397

$0.276

$0.224

DigiKey

USA . 3,939 parts In-Stock

1+ parts

$0.980

100+ parts

$0.397

1k+ parts

$0.276

10k+ parts

$0.210

3,939

$0.980

$0.397

$0.276

$0.210

Arrow

USA . 63,000 parts In-Stock

1+ parts

-

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$0.188

63,000

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$0.188

Future Electronics

Canada . 15,000 parts In-Stock

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$0.275

15,000

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$0.275

Verical

USA . 3,000 parts In-Stock

1+ parts

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$0.217

3,000

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$0.217

Distributors (In-Stock)

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Greenchips

USA . 700 parts In-Stock

1+ parts

$0.227

100+ parts

$0.217

1k+ parts

$0.206

10k+ parts

$0.186

700

$0.227

$0.217

$0.206

$0.186

Maritex

Poland . 741 parts In-Stock

1+ parts

$0.511

100+ parts

$0.265

1k+ parts

$0.188

10k+ parts

-

741

$0.511

$0.265

$0.188

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TME

Poland . 1,751 parts In-Stock

1+ parts

$0.930

100+ parts

$0.356

1k+ parts

$0.263

10k+ parts

-

1,751

$0.930

$0.356

$0.263

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Component Electronics Inc.

Canada . 200 parts In-Stock

1+ parts

$3.850

100+ parts

$2.880

1k+ parts

$2.500

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200

$3.850

$2.880

$2.500

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 288,318 parts In-Stock

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Vyrian

USA . 63,102 parts In-Stock

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IBS Electronics

USA . 60,000 parts In-Stock

1+ parts

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$0.428

60,000

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$0.428

Rutronik

Germany . 21,000 parts In-Stock

1+ parts

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100+ parts

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$0.315

21,000

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$0.315

NAC Semi

USA . 12,000 parts In-Stock

1+ parts

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100+ parts

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$0.467

12,000

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$0.467

ComSIT Distribution GmbH

Germany . 9,000 parts In-Stock

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9,000

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Bristol Electronics

USA . 2,410 parts In-Stock

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$0.317

1k+ parts

$0.156

10k+ parts

$0.137

2,410

-

$0.317

$0.156

$0.137

LIBRA Elektronik GmbH

Germany . 1,529 parts In-Stock

1+ parts

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1,529

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SIE Connect GmbH - GreenChips

Germany . 700 parts In-Stock

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700

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Ashlea Components Ltd

UK . 502 parts In-Stock

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502

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A&K Electronics

USA . 400 parts In-Stock

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400

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Cyclops Electronics Ltd

UK . 400 parts In-Stock

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400

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

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Ampacity Inc.

Singapore . 53,014 parts In-Stock

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$0.160

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$0.160

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Corohmni

South Africa . 219 parts In-Stock

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$0.585

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219

$0.585

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Aztec Data Supply Inc.

USA . 3,727 parts In-Stock

1+ parts

$0.872

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3,727

$0.872

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Andel Nordic

Denmark . 5,937 parts In-Stock

1+ parts

$10.004

100+ parts

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$9.604

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$9.604

5,937

$10.004

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$9.604

Perfect Parts

USA . 84,122 parts In-Stock

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GreenTree Electronics

Israel . 12,000 parts In-Stock

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$0.252

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$0.252

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Eastek

USA . 3,000 parts In-Stock

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$0.290

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S.R.D Solutions

India . 3,000 parts In-Stock

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Argo Parts USA

USA . 2,397 parts In-Stock

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2,397

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Lixinc

USA . 1,689 parts In-Stock

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1,689

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Kepictronics

USA . 1,307 parts In-Stock

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1,307

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Continental Prestige Electronics

USA . 784 parts In-Stock

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784

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iodParts Technologies Inc.

India . 637 parts In-Stock

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637

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Aranea Global

USA . 500 parts In-Stock

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500

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Overview

Experience superior performance and reliability with the ZXTC2045E6TA by Diodes Incorporated, a leading manufacturer in the industry. This small signal bipolar junction transistor boasts a range of applications, from amplifiers to voltage regulators. With its NPN and PNP configuration and high DC current gain, this product offers exceptional value and benefits for your electronic projects. Trust in Diodes Incorporated for top-quality components that deliver unmatched results. Elevate your designs with the ZXTC2045E6TA today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the transistor lightweight and durable, suitable for a wide range of applications.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP transistors in one package provides flexibility for various circuit designs.

Configuration: SEPARATE, 2 ELEMENTS

Separate elements allow for independent control and operation of each transistor, enhancing circuit performance.

Surface Mount: YES

Surface mount capability makes it easy to integrate into compact electronic devices and saves space on the PCB.

Maximum Power Dissipation (Abs): 1.7 W

High power dissipation rating enables the transistor to handle larger loads and operate efficiently without overheating.

Minimum DC Current Gain (hFE): 180

High DC current gain ensures reliable and stable amplification of signals in a circuit.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, the transistor can withstand heat and operate in demanding environments.

Maximum Collector-Emitter Voltage: 30 V

The high collector-emitter voltage rating of 30V allows the transistor to handle higher voltage circuits with ease.

Maximum Collector Current (IC): 1.5 A

The high collector current rating of 1.5A enables the transistor to handle larger current loads without saturation.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and ensures reliable electrical connections during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature allows for efficient soldering during manufacturing processes, ensuring reliable solder joints.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZXTC2045E6TA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

180

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

ZXTC2045E6TA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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