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ZXTC6720MCTA

Diodes Incorporated

ZXTC6720MCTA by Diodes Incorporated

ZXTC6720MCTA by diodes incorporated is a Small Signal BJT with NPN and PNP types, 2 separate elements, and 8 terminals. It's ideal for switching applications with max power dissipation of 3W, max collector-emitter voltage of 80V, and max collector current of 3.5A. The transistor operates at up to 150°C, has a transition frequency of 160MHz, and comes in a small outline package for surface mounting.

Median Price

$1.042

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 2,844 parts In-Stock

1+ parts

$0.814

100+ parts

$0.339

1k+ parts

$0.240

10k+ parts

-

2,844

$0.814

$0.339

$0.240

-

Mouser Electronics

USA . 280 parts In-Stock

1+ parts

$1.270

100+ parts

$0.527

1k+ parts

$0.372

10k+ parts

$0.320

280

$1.270

$0.527

$0.372

$0.320

Newark

USA . 2,844 parts In-Stock

1+ parts

$1.310

100+ parts

$0.543

1k+ parts

$0.383

10k+ parts

-

2,844

$1.310

$0.543

$0.383

-

DigiKey

USA . 2,813 parts In-Stock

1+ parts

$1.330

100+ parts

$0.551

1k+ parts

$0.389

10k+ parts

-

2,813

$1.330

$0.551

$0.389

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Verical

USA . 9,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.275

9,000

-

-

-

$0.275

Avnet

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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3,000

-

-

-

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Element14

Singapore . 2,844 parts In-Stock

1+ parts

-

100+ parts

$0.715

1k+ parts

$0.576

10k+ parts

-

2,844

-

$0.715

$0.576

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Cyclops Electronics Ltd

UK . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

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-

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3,000

-

-

-

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NAC Semi

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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3,000

-

-

-

-

Nova Conductors

Japan . 10 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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10

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 3,169 parts In-Stock

1+ parts

$0.234

100+ parts

-

1k+ parts

-

10k+ parts

-

3,169

$0.234

-

-

-

Semicontronic

India . 3,077 parts In-Stock

1+ parts

$0.234

100+ parts

$0.228

1k+ parts

$0.227

10k+ parts

-

3,077

$0.234

$0.228

$0.227

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Corohmni

South Africa . 82 parts In-Stock

1+ parts

$0.407

100+ parts

-

1k+ parts

-

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82

$0.407

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-

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Advanced Electronics

New Zealand . 97 parts In-Stock

1+ parts

$1.733

100+ parts

$1.577

1k+ parts

$1.421

10k+ parts

-

97

$1.733

$1.577

$1.421

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

1+ parts

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25,000

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Lixinc

USA . 13,865 parts In-Stock

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13,865

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Argo Parts USA

USA . 3,841 parts In-Stock

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3,841

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Kepictronics

USA . 3,000 parts In-Stock

1+ parts

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3,000

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Eastek

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.410

10k+ parts

-

3,000

-

-

$0.410

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Continental Prestige Electronics

USA . 2,003 parts In-Stock

1+ parts

-

100+ parts

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2,003

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Aranea Global

USA . 50 parts In-Stock

1+ parts

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100+ parts

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50

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Overview

Discover the ZXTC6720MCTA by Diodes Incorporated, a top-quality Small Signal Bipolar Junction Transistor perfect for switching applications. With its separate NPN and PNP elements, this transistor offers superior performance and reliability. Designed with a small outline package and high operating temperature, this transistor is ideal for a wide range of electronic devices. Trust in Diodes Incorporated for cutting-edge technology and unmatched quality. Upgrade your designs with the ZXTC6720MCTA and experience the difference.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Offers good insulation and protection for the transistor components, making it reliable and durable.

Polarity or Channel Type: NPN AND PNP

Provides flexibility in circuit design and application, suitable for a wide range of electronic projects.

Configuration: SEPARATE, 2 ELEMENTS

Allows for independent control of two separate elements, increasing versatility in circuit design.

Transistor Application: SWITCHING

Optimized for switching applications, providing fast and efficient performance in turning on and off electrical signals.

Surface Mount: YES

Enables easy and convenient mounting on printed circuit boards, saving space and facilitating automated assembly processes.

Maximum Power Dissipation: 3 W

Capable of handling high power levels without risk of overheating, ensuring reliable operation under demanding conditions.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, suitable for applications that require robust thermal capabilities.

Maximum Collector-Emitter Voltage: 80 V

Provides a high voltage rating, suitable for applications where higher voltage levels are required.

Maximum Collector Current: 3.5 A

Capable of handling high current levels, making it suitable for applications with demanding current requirements.

Nominal Transition Frequency: 160 MHz

Offers high frequency performance, suitable for applications that require fast switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZXTC6720MCTA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

R-PDSO-N8

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

8

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

3 W

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZXTC6720MCTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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