Loading...

ZX5T3ZTA

Diodes Incorporated

ZX5T3ZTA by Diodes Incorporated

ZX5T3ZTA by Diodes Inc. is a PNP BJT transistor with 3 terminals, 110 min hFE, and 40V max collector-emitter voltage. Ideal for switching applications, it has a max power dissipation of 3W and operates up to 150°C. Suitable for surface mount designs in small outline packages.

Median Price

$0.477

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Element14

Singapore . 469 parts In-Stock

1+ parts

$0.636

100+ parts

$0.393

1k+ parts

$0.290

10k+ parts

-

469

$0.636

$0.393

$0.290

-

DigiKey

USA . 3,698 parts In-Stock

1+ parts

$1.060

100+ parts

$0.431

1k+ parts

$0.302

10k+ parts

$0.228

3,698

$1.060

$0.431

$0.302

$0.228

Mouser Electronics

USA . 2,153 parts In-Stock

1+ parts

$1.060

100+ parts

$0.381

1k+ parts

$0.261

10k+ parts

$0.224

2,153

$1.060

$0.381

$0.261

$0.224

Newark

USA . 165 parts In-Stock

1+ parts

$1.200

100+ parts

$0.567

1k+ parts

$0.469

10k+ parts

-

165

$1.200

$0.567

$0.469

-

Future Electronics

Canada . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.200

10k+ parts

$0.193

3,000

-

-

$0.200

$0.193

Arrow

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.202

10k+ parts

-

1,000

-

-

$0.202

-

Verical

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.223

10k+ parts

-

1,000

-

-

$0.223

-

Farnell

UK . 165 parts In-Stock

1+ parts

-

100+ parts

$0.318

1k+ parts

$0.214

10k+ parts

$0.192

165

-

$0.318

$0.214

$0.192

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 17,597 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

17,597

-

-

-

-

Bristol Electronics

USA . 2,636 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,636

-

-

-

-

NAC Semi

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.350

10k+ parts

$0.323

2,000

-

-

$0.350

$0.323

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Kepictronics

USA . 27,860 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

27,860

-

-

-

-

Perfect Parts

USA . 18,562 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

18,562

-

-

-

-

Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,000

-

-

-

-

Lixinc

USA . 8,758 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,758

-

-

-

-

Eastek

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.294

10k+ parts

-

1,000

-

-

$0.294

-

Continental Prestige Electronics

USA . 978 parts In-Stock

1+ parts

-

100+ parts

$0.403

1k+ parts

$0.230

10k+ parts

$0.210

978

-

$0.403

$0.230

$0.210

iodParts Technologies Inc.

India . 525 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

525

-

-

-

-

Overview

Unlock the potential of your electronic devices with the ZX5T3ZTA by Diodes Incorporated. Designed with precision and quality in mind, this Small Signal Bipolar Junction Transistor (BJT) offers unparalleled reliability in switching applications. With a maximum power dissipation of 3W and a peak reflow temperature of 260°C, this PNP transistor delivers top-notch performance in a compact package. Trust in Diodes Incorporated to provide innovative solutions for your circuit design needs. Choose the ZX5T3ZTA for efficiency, durability, and unmatched value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable in various operating conditions.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, offering flexibility in circuit design.

Configuration: SINGLE

Simplified circuit design with a single transistor in the package, making it easy to integrate into applications.

Transistor Application: SWITCHING

Designed for switching applications, offering fast operation and low power dissipation for efficiency.

Surface Mount: YES

Easy to mount on circuit boards for compact and space-saving designs.

Package Shape: RECTANGULAR

Standard shape for easy handling and mounting, suitable for various applications.

Maximum Power Dissipation (Abs): 3 W

Can handle relatively high power dissipation, allowing for robust performance in demanding conditions.

Minimum DC Current Gain (hFE): 110

Provides high current gain, ensuring amplification and stability in the circuit.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures, suitable for industrial and automotive applications.

Maximum Collector-Emitter Voltage: 40 V

Withstands high voltages, suitable for applications with varying voltage requirements.

Maximum Collector Current (IC): 5.5 A

Capable of handling high currents, suitable for power switching applications.

Terminal Finish: MATTE TIN

Provides good contact for excellent electrical conductivity and reliability.

Nominal Transition Frequency (fT): 152 MHz

High transition frequency for fast switching and high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZX5T3ZTA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

110

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

3 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZX5T3ZTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 11