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ZX5T851GTA

Diodes Incorporated

ZX5T851GTA by Diodes Incorporated

ZX5T851GTA by Diodes Inc. is a NPN BJT transistor with 60V VCEO, 6A IC, and 3W Ptot. Ideal for switching applications, it has a hFE of 20 and operates up to 150°C. This small outline package with Gull Wing terminals is AEC-Q101 compliant for automotive use.

Median Price

$1.450

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,669 parts In-Stock

1+ parts

$1.450

100+ parts

$0.609

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$0.387

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3,669

$1.450

$0.609

$0.387

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Adafruit Industries

USA . 270 parts In-Stock

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$1.483

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$1.350

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$1.216

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270

$1.483

$1.350

$1.216

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DigiKey

USA . 43,988 parts In-Stock

1+ parts

$1.540

100+ parts

$0.646

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$0.461

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$0.356

43,988

$1.540

$0.646

$0.461

$0.356

Avnet

USA . 1,000 parts In-Stock

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Arrow

USA . 756 parts In-Stock

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$0.360

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756

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Verical

USA . 756 parts In-Stock

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$0.366

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756

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$0.366

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Distributors (In-Stock)

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Freelance Electronics

USA . 318 parts In-Stock

1+ parts

$0.244

100+ parts

$0.256

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$0.241

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318

$0.244

$0.256

$0.241

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Nova Conductors

Japan . 91 parts In-Stock

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$0.430

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91

$0.430

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Bristol Electronics

USA . 292 parts In-Stock

1+ parts

$1.011

100+ parts

$0.404

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$0.324

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292

$1.011

$0.404

$0.324

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TME

Poland . 794 parts In-Stock

1+ parts

$1.380

100+ parts

$0.594

1k+ parts

$0.406

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794

$1.380

$0.594

$0.406

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Ozdisan Elektronik

Türkiye . 8,564 parts In-Stock

1+ parts

$57.130

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8,564

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Vyrian

USA . 22,772 parts In-Stock

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22,772

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ComSIT Distribution GmbH

Germany . 5,210 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 1,654 parts In-Stock

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NAC Semi

USA . 1,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 292 parts In-Stock

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292

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Dan-Mar Components

USA . 292 parts In-Stock

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292

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Prism Electronics

USA . 50 parts In-Stock

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50

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Cyclops Electronics Ltd

UK . 3 parts In-Stock

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3

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Distributors (Availability)

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Semicontronic

India . 24,755 parts In-Stock

1+ parts

$0.259

100+ parts

$0.253

1k+ parts

$0.251

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24,755

$0.259

$0.253

$0.251

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Continental Prestige Electronics

USA . 5,773 parts In-Stock

1+ parts

$0.430

100+ parts

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$0.421

5,773

$0.430

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$0.421

Argo Parts USA

USA . 3,814 parts In-Stock

1+ parts

$0.430

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$0.417

3,814

$0.430

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$0.417

Netroflash

USA . 50 parts In-Stock

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$0.430

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$0.421

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50

$0.430

$0.421

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Corohmni

South Africa . 52 parts In-Stock

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$0.582

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52

$0.582

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Ampacity Inc.

Singapore . 22,605 parts In-Stock

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$0.590

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22,605

$0.590

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Aztec Data Supply Inc.

USA . 121 parts In-Stock

1+ parts

$1.329

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121

$1.329

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Advanced Electronics

New Zealand . 270 parts In-Stock

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$1.483

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$1.350

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$1.216

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270

$1.483

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$1.216

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Perfect Parts

USA . 7,580 parts In-Stock

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7,580

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Kepictronics

USA . 2,000 parts In-Stock

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Glotronic Ltd.

UK . 1,600 parts In-Stock

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Eastek

USA . 1,000 parts In-Stock

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$0.456

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Assy Fe

Spain . 1,000 parts In-Stock

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Authorized Procurement Solutions

USA . 878 parts In-Stock

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878

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GreenTree Electronics

Israel . 170 parts In-Stock

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170

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Lixinc

USA . 152 parts In-Stock

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Overview

Enhance your electronic projects with the ZX5T851GTA by Diodes Incorporated. Known for their top-notch quality and reliability, Diodes Incorporated delivers small signal bipolar junction transistors that excel in switching applications. With a maximum power dissipation of 3W and a collector current of 6A, this NPN transistor offers exceptional performance while operating at temperatures up to 150°C. The matte tin terminal finish ensures secure connections, making it ideal for various circuit designs. Experience seamless integration and superior functionality with the ZX5T851GTA, setting new standards in the world of electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: NPN

Commonly used for amplification and switching applications in electronic circuits.

Maximum Power Dissipation (Abs): 3 W

Can handle high power levels without overheating, making it suitable for switching applications.

Minimum DC Current Gain (hFE): 20

Ensures proper amplification and switching performance in various circuit designs.

Maximum Collector-Emitter Voltage: 60 V

Can handle moderate voltage levels, suitable for a wide range of applications.

Maximum Collector Current (IC): 6 A

Capable of handling high current levels without performance degradation.

Nominal Transition Frequency (fT): 130 MHz

Provides high frequency response, making it suitable for fast switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ZX5T851GTA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

3 W

Qualification:

Not Qualified

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZX5T851GTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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