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TB1100H-13-F

Diodes Incorporated

TB1100H-13-F by Diodes Incorporated

Diodes Incorporated's TB1100H-13-F is a silicon surge protector with 50A non-repetitive peak on-state current, 90V max DC off-state voltage, and 150°C max operating temp. Ideal for protecting electronic devices from power surges in various applications.

Median Price

$0.397

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,167 parts In-Stock

1+ parts

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8,167

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ComSIT Distribution GmbH

Germany . 3,000 parts In-Stock

1+ parts

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3,000

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NAC Semi

USA . 3,000 parts In-Stock

1+ parts

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$0.397

3,000

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$0.397

ComSIT USA

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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3,000

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LIBRA Elektronik GmbH

Germany . 1,976 parts In-Stock

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1,976

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 2,086 parts In-Stock

1+ parts

$5.004

100+ parts

-

1k+ parts

$4.804

10k+ parts

$4.804

2,086

$5.004

-

$4.804

$4.804

AZTECH Wire

Italy . 126 parts In-Stock

1+ parts

$18.940

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126

$18.940

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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90,000

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Perfect Parts

USA . 52,761 parts In-Stock

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Kepictronics

USA . 30,000 parts In-Stock

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30,000

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Eastek

USA . 3,000 parts In-Stock

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3,000

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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3,000

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Overview

Protect your electronic devices with the TB1100H-13-F by Diodes Incorporated. As a leading manufacturer of quality silicon surge protectors, Diodes Incorporated ensures reliability and durability in every product they produce. Ideal for a variety of applications, this single configuration surge protector offers customers peace of mind knowing their valuable equipment is safeguarded against unexpected power surges. With a maximum holding current of 800mA and a maximum breakdown voltage of 130V, the TB1100H-13-F provides superior protection without compromising on performance. Trust Diodes Incorporated to deliver top-notch surge protection solutions for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material of the package body provides durability and protection for the surge protector, making it suitable for long-term use.

Configuration: SINGLE

The single configuration simplifies installation and ensures straightforward operation of the surge protector.

Non Repetitive Peak On-state Current: 50 A

With a high peak on-state current of 50 A, this surge protector can effectively handle sudden surges in power, protecting connected devices.

Surface Mount: YES

Being surface mountable, this surge protector can be easily integrated into electronic circuits, saving space and simplifying assembly.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient placement and mounting of the surge protector in electronic devices or circuits.

Terminal Form: C BEND

The C bend terminal form provides a secure connection point for wires or leads, ensuring reliable performance of the surge protector.

No. of Terminals: 2

Having 2 terminals simplifies the wiring process and ensures proper connectivity of the surge protector within the circuit.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for space-saving integration of the surge protector in compact electronic devices or circuits.

Maximum DC Off-state Voltage: 90 V

With a maximum DC off-state voltage of 90 V, this surge protector can effectively protect connected devices from high voltage spikes.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures that the surge protector can withstand elevated temperatures, enhancing its reliability in various environments.

Trigger Device Type: THYRISTOR SURGE PROTECTOR

The thyristor surge protector type provides fast response to power surges, effectively diverting excess voltage away from connected devices.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C ensures that the surge protector remains functional even in cold environments, making it suitable for a wide range of applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish offers excellent conductivity and corrosion resistance, ensuring long-term performance of the surge protector.

Terminal Position: DUAL

Having dual terminal positions allows for flexible wiring configurations and compatibility with different circuit layouts, enhancing the versatility of the surge protector.

Maximum Holding Current: 800 mA

With a maximum holding current of 800 mA, this surge protector can effectively clamp down on excess current, protecting connected devices from damage.

Maximum Breakdown Voltage: 130 V

The maximum breakdown voltage of 130 V ensures that the surge protector can efficiently handle voltage spikes, safeguarding connected devices from potential harm.

Maximum Time At Peak Reflow Temperature (s): 30

The surge protector can withstand peak reflow temperatures for up to 30 seconds, allowing for secure soldering and assembly during manufacturing processes.

Peak Reflow Temperature °C: 260

The surge protector can be exposed to peak reflow temperatures of 260°C during soldering processes without compromising its performance or integrity.

Reference Standard: UL RECOGNIZED

Being UL recognized signifies that the surge protector meets stringent safety and performance standards, providing assurance of quality and reliability.

Technical Specifications

Silicon Surge Protectors TB1100H-13-F attributes and parameters. Explore more Silicon Surge Protectors devices from Diodes Incorporated

Specs

Maximum Breakdown Voltage:

130 V

Configuration:

Maximum DC Off-state Voltage:

90 V

Maximum Holding Current:

800 mA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Non Repetitive Peak On-state Current:

50 A

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Silicon Surge Protectors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

C BEND

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

Trade Compliance

TB1100H-13-F Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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