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SBR20E120CT

Diodes Incorporated

SBR20E120CT by Diodes Incorporated

SBR20E120CT by Diodes Inc. is a common cathode diode with 2 elements, featuring a max reverse current of 90uA and max output current of 10A. It operates b/w -65 to 175°C, ideal for efficiency applications requiring a peak repetitive reverse voltage of 120V and non-repetitive forward current of 180A.

Median Price

$1.335

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 258 parts In-Stock

1+ parts

$1.200

100+ parts

$0.795

1k+ parts

$0.578

10k+ parts

$0.557

258

$1.200

$0.795

$0.578

$0.557

DigiKey

USA . 9 parts In-Stock

1+ parts

$1.470

100+ parts

-

1k+ parts

-

10k+ parts

-

9

$1.470

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 16,338 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

16,338

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 391 parts In-Stock

1+ parts

$5.330

100+ parts

$5.300

1k+ parts

$5.280

10k+ parts

$5.260

391

$5.330

$5.300

$5.280

$5.260

RC Electronics

USA . 1,600 parts In-Stock

1+ parts

-

100+ parts

$0.520

1k+ parts

$0.490

10k+ parts

$0.480

1,600

-

$0.520

$0.490

$0.480

Overview

Enhance the efficiency of your electronics with the SBR20E120CT by Diodes Incorporated. With a reputation for high-quality products, Diodes Incorporated delivers diodes and rectifiers that are built to last. This common cathode, two-element diode offers a maximum output current of 10A and a maximum reverse voltage of 120V, making it ideal for a wide range of efficiency applications. Trust in Diodes Incorporated to provide reliable solutions that add value to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material makes the package durable and resistant to heat, ensuring the diode's longevity.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for efficient use in circuits, making it a versatile component.

Maximum Reverse Current: 90 uA

Low maximum reverse current of 90 uA indicates low leakage, ensuring efficient performance of the diode.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and compact placement in circuits, optimizing space usage.

Terminal Finish: MATTE TIN

Matte tin finish provides good conductivity and solderability, ensuring reliable connections in the circuit.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, it efficiently converts alternating current to direct current, making it ideal for various power supply applications.

Maximum Forward Voltage (VF): 0.92 V

Low maximum forward voltage of 0.92 V implies minimal power loss across the diode, leading to higher efficiency in the circuit.

Maximum Output Current: 10 A

High maximum output current of 10 A allows the diode to handle substantial loads, making it suitable for power applications.

Maximum Repetitive Peak Reverse Voltage: 120 V

High maximum repetitive peak reverse voltage of 120 V ensures the diode can withstand voltage spikes, enhancing its reliability in the circuit.

Technical Specifications

Diodes & Rectifiers SBR20E120CT attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Additional Features:

FREE WHEELING DIODE

Application:

EFFICIENCY

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.92 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

180 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

120 V

Maximum Reverse Current:

90 uA

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

SBR20E120CT Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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