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SBR20A100CTB-13

Diodes Incorporated

SBR20A100CTB-13 by Diodes Incorporated

Diodes Incorporated SBR20A100CTB-13 is a common cathode rectifier diode with 2 elements, max output current of 10A, and VF of 0.85V. Ideal for efficiency applications, it operates b/w -65 to 175°C with a peak reverse voltage of 100V.

Median Price

$0.852

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 290 parts In-Stock

1+ parts

$1.290

100+ parts

$0.703

1k+ parts

$0.419

10k+ parts

$0.414

290

$1.290

$0.703

$0.419

$0.414

Verical

USA . 8,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.414

10k+ parts

-

8,000

-

-

$0.414

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 2,500 parts In-Stock

1+ parts

$0.125

100+ parts

$0.114

1k+ parts

$0.102

10k+ parts

-

2,500

$0.125

$0.114

$0.102

-

Component Stockers USA

USA . 21,132 parts In-Stock

1+ parts

$1.090

100+ parts

$0.690

1k+ parts

$0.400

10k+ parts

$0.400

21,132

$1.090

$0.690

$0.400

$0.400

Microchip USA

USA . 190 parts In-Stock

1+ parts

$4.090

100+ parts

$4.070

1k+ parts

$4.050

10k+ parts

$4.040

190

$4.090

$4.070

$4.050

$4.040

Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,000

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 9,722 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9,722

-

-

-

-

Perfect Parts

USA . 302 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

302

-

-

-

-

Metaverse IC Inc.

Canada . 248 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

248

-

-

-

-

RC Electronics

USA . 50 parts In-Stock

1+ parts

-

100+ parts

$0.790

1k+ parts

$0.740

10k+ parts

$0.730

50

-

$0.790

$0.740

$0.730

Overview

Enhance your electronic devices with the cutting-edge SBR20A100CTB-13 diode by Diodes Incorporated. Renowned for their top-quality manufacturing, Diodes Incorporated delivers reliable components that ensure superior efficiency in a variety of applications. With a common cathode configuration and two elements, this diode offers exceptional performance with a maximum output current of 10 A and a peak repetitive peak reverse voltage of 100 V. Upgrade your projects with the SBR20A100CTB-13 and experience the value and benefits it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, making them long-lasting and reliable.

Config: COMMON CATHODE, 2 ELEMENTS

Allows for easy implementation in circuit designs and provides consistent polarity for each element.

Surface Mount: YES

Enables easy mounting on circuit boards, saving space and allowing for efficient soldering.

Maximum Reverse Current: 100 uA

Ensures minimal leakage current when the diode is in the reverse biased state, enhancing efficiency.

Package Shape: RECTANGULAR

Facilitates easy placement and alignment on circuit boards, enhancing overall manufacturing efficiency.

No. of Terminals: 2

Simplifies the connection process and reduces complexity in circuit designs.

Package Style (Meter): SMALL OUTLINE

Ideal for space-constrained applications and provides a compact form factor.

Application: EFFICIENCY

Designed specifically for applications where efficiency is crucial, ensuring optimal performance.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, making it suitable for a wide range of operating environments.

Minimum Operating Temperature: -65 °C

Capable of operating in extremely low temperatures, offering versatility in various settings.

Terminal Finish: MATTE TIN

Provides a reliable connection and prevents oxidation, ensuring consistent performance.

Terminal Position: SINGLE

Simplifies the installation process and reduces the chances of error during assembly.

Peak Reflow Temperature °C: 260

Can withstand high-temperature reflow processes during assembly, ensuring durability.

Reference Standard: AEC-Q101

Meets automotive industry standards for quality and reliability, suitable for automotive applications.

Diode Type: RECTIFIER DIODE

Designed for converting AC to DC with low forward voltage drop, ensuring efficient operation.

Maximum Forward Voltage (VF): 0.85 V

Ensures minimal voltage drop across the diode, improving energy efficiency.

Maximum Output Current: 10 A

Capable of handling high current loads, making it suitable for a wide range of applications.

Technology: AVALANCHE

Utilizes avalanche breakdown for efficient switching and high power handling capabilities.

Terminal Form: GULL WING

Facilitates easy soldering and enhances mechanical strength, ensuring a secure connection.

No. of Elements: 2

Provides additional functionality or redundancy in circuit designs, enhancing reliability.

Maximum Repetitive Peak Reverse Voltage: 100 V

Can withstand high reverse voltages, suitable for applications requiring voltage rectification.

Maximum Non Repetitive Peak Forward Current: 250 A

Capable of handling high transient current surges, ensuring robust performance under varying loads.

Diode Element Material: SILICON

Offers reliable and consistent performance, commonly used in diode manufacturing for its electrical properties.

Technical Specifications

Diodes & Rectifiers SBR20A100CTB-13 attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Additional Features:

FREE WHEELING DIODE, HIGH RELIABILITY

Application:

EFFICIENCY

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.85 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Maximum Non Repetitive Peak Forward Current:

250 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

100 uA

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

SBR20A100CTB-13 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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