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MMBZ5258BTS-7-F

Diodes Incorporated

MMBZ5258BTS-7-F by Diodes Incorporated

MMBZ5258BTS-7-F by Diodes Inc. is a Zener diode with 3.4 mA test current, 27 V reverse voltage, and 36 V reference voltage. It is used in applications requiring precise voltage regulation, such as power supplies and signal conditioning circuits. With a small outline package and dual terminals, it offers reliable performance in a wide temperature range from -65 to 150 °C.

Median Price

$0.110

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 24,000 parts In-Stock

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$0.110

Avnet

USA . 3,000 parts In-Stock

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3,000

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Distributors (In-Stock)

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Nova Conductors

Japan . 55 parts In-Stock

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$0.147

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55

$0.147

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Chip Stock

USA . 24,500 parts In-Stock

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24,500

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Vyrian

USA . 7,676 parts In-Stock

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7,676

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NAC Semi

USA . 3,000 parts In-Stock

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3,000

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Distributors (Availability)

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Netroflash

USA . 100 parts In-Stock

1+ parts

$0.147

100+ parts

$0.144

1k+ parts

$0.140

10k+ parts

$0.137

100

$0.147

$0.144

$0.140

$0.137

Ampacity Inc.

Singapore . 13,014 parts In-Stock

1+ parts

$0.183

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13,014

$0.183

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AZTECH Wire

Italy . 815 parts In-Stock

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$18.340

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815

$18.340

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Component Stockers USA

USA . 28,250 parts In-Stock

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$0.100

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$0.100

QUARKTWIN TECHNOLOGY LTD

USA . 19,340 parts In-Stock

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Eastek

USA . 3,000 parts In-Stock

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Overview

Experience the superior quality and reliability of the MMBZ5258BTS-7-F Zener Diode by Diodes Incorporated. This innovative product offers customers a dependable solution for a wide range of applications, ensuring optimal performance and efficiency. With a focus on value and benefits, this Zener diode provides precise voltage regulation and protection, making it an essential component for your electronic projects. Trust in Diodes Incorporated for cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the zener diode, making it suitable for a variety of applications.

Working Test Current: 3.4 mA

The high working test current ensures reliability and stability of the zener diode during operation.

Maximum Reverse Current: 0.1 uA

Low maximum reverse current indicates excellent performance and efficiency of the zener diode.

Reverse Test Voltage: 27 V

The high reverse test voltage provides robust protection against reverse voltage situations in the circuit.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the zener diode to function efficiently in various environmental conditions.

Technical Specifications

Zener Diodes MMBZ5258BTS-7-F attributes and parameters. Explore more Zener Diodes devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Config:

SEPARATE, 3 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.9 V

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

3

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Nominal Reference Voltage:

36 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

27 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

3.4 mA

Trade Compliance

MMBZ5258BTS-7-F Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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