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DMPH6250SQ-7

Diodes Incorporated

DMPH6250SQ-7 by Diodes Incorporated

DMPH6250SQ-7 by Diodes Inc. is a P-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 2.4A Drain Current, and 0.24 ohm On Resistance. With AEC-Q101 standard compliance, it operates b/w -55 to 175 °C and has a peak reflow temp of 260C.

Median Price

$0.248

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 440 parts In-Stock

1+ parts

$0.583

100+ parts

$0.322

1k+ parts

$0.215

10k+ parts

-

440

$0.583

$0.322

$0.215

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Arrow

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

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-

10k+ parts

$0.137

3,000

-

-

-

$0.137

Verical

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

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$0.138

3,000

-

-

-

$0.138

RS (Exports)

UK . 2,900 parts In-Stock

1+ parts

-

100+ parts

$0.296

1k+ parts

$0.272

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-

2,900

-

$0.296

$0.272

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Farnell

UK . 795 parts In-Stock

1+ parts

-

100+ parts

$0.200

1k+ parts

$0.145

10k+ parts

$0.132

795

-

$0.200

$0.145

$0.132

Element14

Singapore . 795 parts In-Stock

1+ parts

-

100+ parts

$0.359

1k+ parts

$0.259

10k+ parts

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795

-

$0.359

$0.259

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 34 parts In-Stock

1+ parts

$0.176

100+ parts

-

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-

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34

$0.176

-

-

-

Maritex

Poland . 4,532 parts In-Stock

1+ parts

$0.227

100+ parts

$0.171

1k+ parts

$0.142

10k+ parts

-

4,532

$0.227

$0.171

$0.142

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NAC Semi

USA . 324,000 parts In-Stock

1+ parts

-

100+ parts

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324,000

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-

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Vyrian

USA . 102,715 parts In-Stock

1+ parts

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102,715

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Rutronik

Germany . 84,002 parts In-Stock

1+ parts

-

100+ parts

-

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$0.173

84,002

-

-

-

$0.173

Chip Stock

USA . 72,500 parts In-Stock

1+ parts

-

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72,500

-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 100,359 parts In-Stock

1+ parts

$0.101

100+ parts

-

1k+ parts

-

10k+ parts

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100,359

$0.101

-

-

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Semicontronic

India . 99,787 parts In-Stock

1+ parts

$0.101

100+ parts

$0.098

1k+ parts

$0.098

10k+ parts

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99,787

$0.101

$0.098

$0.098

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Argo Parts USA

USA . 422 parts In-Stock

1+ parts

$0.175

100+ parts

-

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-

10k+ parts

$0.170

422

$0.175

-

-

$0.170

Advanced Electronics

New Zealand . 450 parts In-Stock

1+ parts

$0.178

100+ parts

$0.178

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$0.178

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450

$0.178

$0.178

$0.178

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Corohmni

South Africa . 68 parts In-Stock

1+ parts

$0.689

100+ parts

-

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-

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68

$0.689

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Aztec Data Supply Inc.

USA . 1,133 parts In-Stock

1+ parts

$1.120

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1,133

$1.120

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Modulus Dynamics

Lithuania . 20,298 parts In-Stock

1+ parts

$1.901

100+ parts

$1.901

1k+ parts

$1.901

10k+ parts

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20,298

$1.901

$1.901

$1.901

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GreenTree Electronics

Israel . 144,002 parts In-Stock

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144,002

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Eastek

USA . 24,000 parts In-Stock

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24,000

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Continental Prestige Electronics

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

$0.217

1k+ parts

$0.132

10k+ parts

$0.127

3,000

-

$0.217

$0.132

$0.127

Allen Electronics Distributors

USA . 2,975 parts In-Stock

1+ parts

-

100+ parts

$0.233

1k+ parts

$0.214

10k+ parts

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2,975

-

$0.233

$0.214

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Lixinc

USA . 1,018 parts In-Stock

1+ parts

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1,018

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

$0.172

1k+ parts

$0.167

10k+ parts

$0.164

1,000

-

$0.172

$0.167

$0.164

Overview

The DMPH6250SQ-7 by Diodes Incorporated is a top-quality P-CHANNEL Small Signal Field Effect Transistor designed for switching applications. With a robust construction and enhanced performance, this transistor offers reliability and efficiency for your electronic projects. The package's dual terminal design and built-in diode make it easy to integrate into your circuitry, saving you time and effort. Whether you're a hobbyist or a professional, this transistor provides value and benefits that will elevate your projects to the next level. Choose the DMPH6250SQ-7 for superior performance and peace of mind.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this transistor lightweight and durable, ideal for applications where weight and reliability are crucial.

Polarity or Channel Type: P-CHANNEL

P-channel transistors are known for their low power consumption and high input impedance, making this transistor a great choice for low-power applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and saves space on the PCB, making this transistor a convenient and efficient choice.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast response times and low power dissipation, making it ideal for efficient power management.

Surface Mount: YES

With a surface-mount design, this transistor is easy to assemble and suitable for automated production processes, saving time and costs.

Minimum DS Breakdown Voltage: 60 V

The high breakdown voltage ensures reliability and protection against voltage spikes, making this transistor suitable for high-voltage applications.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient use of space on the PCB, making this transistor suitable for compact designs.

Terminal Form: GULL WING

The gull wing terminal form provides mechanical strength and easy soldering, ensuring a reliable connection in various applications.

Operating Mode: ENHANCEMENT MODE

The enhancement mode operation offers precise control over the transistor's conductance, making it suitable for applications requiring precise voltage regulation.

No. of Terminals: 3

With three terminals, this transistor offers versatile connection options and flexibility in circuit design, making it suitable for a range of applications.

Maximum Power Dissipation (Abs): 1.62 W

The high power dissipation capacity allows this transistor to handle increased loads without overheating, ensuring reliable performance in demanding conditions.

Package Style (Meter): SMALL OUTLINE

The small outline package style reduces the footprint on the PCB, making this transistor suitable for space-constrained applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

The use of metal-oxide semiconductor technology provides high efficiency and fast switching speeds, making this transistor ideal for high-performance applications.

Maximum Operating Temperature: 175 °C

The high operating temperature range ensures reliable performance in various environments, making this transistor suitable for industrial and automotive applications.

Transistor Element Material: SILICON

Silicon transistors offer high gain and low noise, making this transistor a good choice for applications requiring high signal-to-noise ratios.

Minimum Operating Temperature: -55 °C

With a low minimum operating temperature, this transistor can withstand cold environments, making it suitable for outdoor and automotive applications.

Terminal Finish: MATTE TIN

The matte tin finish provides corrosion resistance and ensures a reliable electrical connection, making this transistor suitable for long-term use.

Maximum Drain Current (ID): 2.4 A

The high drain current capacity allows this transistor to handle large loads, making it suitable for power applications that require high current capabilities.

Maximum Drain-Source On Resistance: 0.24 ohm

The low drain-source on resistance minimizes power loss and heat generation, making this transistor energy-efficient and suitable for high-power applications.

Terminal Position: DUAL

With dual terminal positions, this transistor offers versatility in circuit layout and connection options, making it suitable for various PCB designs.

Maximum Time At Peak Reflow Temperature (s): 30

The short reflow time ensures efficient soldering and assembly processes, making this transistor ideal for high-volume production.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this transistor can withstand the soldering process without damage, ensuring reliability in manufacturing.

Maximum Feedback Capacitance (Crss): 23.2 pF

The low feedback capacitance minimizes signal distortion and improves high-frequency performance, making this transistor suitable for RF applications.

Reference Standard: AEC-Q101

Compliant with AEC-Q101 standards, this transistor meets automotive-grade requirements, ensuring high reliability and performance in automotive applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMPH6250SQ-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

2.4 A

Maximum Drain-Source On Resistance:

.24 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

23.2 pF

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMPH6250SQ-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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