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DMPH6250SQ-13

Diodes Incorporated

DMPH6250SQ-13 by Diodes Incorporated

DMPH6250SQ-13 by Diodes Inc. is a P-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 2.4A ID, and 0.24 ohm RDS(on). With ENHANCEMENT MODE operation, it's ideal for automotive (AEC-Q101) and industrial electronics due to its high temp range (-55 to 175°C) and small outline package style.

Median Price

$0.273

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 3 parts In-Stock

1+ parts

$0.929

100+ parts

$0.372

1k+ parts

$0.255

10k+ parts

-

3

$0.929

$0.372

$0.255

-

Mouser Electronics

USA . 904 parts In-Stock

1+ parts

$0.960

100+ parts

$0.394

1k+ parts

$0.293

10k+ parts

-

904

$0.960

$0.394

$0.293

-

Verical

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.119

10,000

-

-

-

$0.119

RS (Exports)

UK . 9,975 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.279

10k+ parts

$0.271

9,975

-

-

$0.279

$0.271

Farnell

UK . 7,390 parts In-Stock

1+ parts

-

100+ parts

$0.258

1k+ parts

$0.182

10k+ parts

$0.161

7,390

-

$0.258

$0.182

$0.161

Element14

Singapore . 7,390 parts In-Stock

1+ parts

-

100+ parts

$0.267

1k+ parts

$0.185

10k+ parts

-

7,390

-

$0.267

$0.185

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 95 parts In-Stock

1+ parts

$0.179

100+ parts

-

1k+ parts

-

10k+ parts

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95

$0.179

-

-

-

Chip Stock

USA . 87,500 parts In-Stock

1+ parts

-

100+ parts

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87,500

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-

-

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Vyrian

USA . 14,290 parts In-Stock

1+ parts

-

100+ parts

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14,290

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-

-

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NAC Semi

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

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10,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 13,879 parts In-Stock

1+ parts

$0.101

100+ parts

$0.098

1k+ parts

$0.098

10k+ parts

-

13,879

$0.101

$0.098

$0.098

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Argo Parts USA

USA . 1,651 parts In-Stock

1+ parts

$0.179

100+ parts

-

1k+ parts

-

10k+ parts

$0.174

1,651

$0.179

-

-

$0.174

Ampacity Inc.

Singapore . 14,209 parts In-Stock

1+ parts

$0.220

100+ parts

-

1k+ parts

-

10k+ parts

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14,209

$0.220

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-

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Corohmni

South Africa . 98 parts In-Stock

1+ parts

$0.333

100+ parts

-

1k+ parts

-

10k+ parts

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98

$0.333

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Continental Prestige Electronics

USA . 9,400 parts In-Stock

1+ parts

$0.391

100+ parts

$0.217

1k+ parts

$0.123

10k+ parts

$0.120

9,400

$0.391

$0.217

$0.123

$0.120

Aztec Data Supply Inc.

USA . 2,381 parts In-Stock

1+ parts

$1.180

100+ parts

-

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-

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2,381

$1.180

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-

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Eastek

USA . 30,000 parts In-Stock

1+ parts

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100+ parts

-

1k+ parts

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10k+ parts

$0.186

30,000

-

-

-

$0.186

Allen Electronics Distributors

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.127

10,000

-

-

-

$0.127

Overview

Experience superior performance with the DMPH6250SQ-13 by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated's small signal field-effect transistors offer unmatched quality and reliability. Ideal for switching applications, this P-channel transistor with a built-in diode provides exceptional power dissipation and operating temperature range. With a maximum drain current of 2.4 A and a low drain-source resistance, this enhancement mode transistor ensures efficient operation in various electronic devices. Trust Diodes Incorporated to deliver cutting-edge technology and innovative solutions for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides durability and protection for the transistor, making it reliable for various applications.

Polarity or Channel Type: P-CHANNEL

P-channel transistors are known for their low on-resistance and high current-carrying capability, making this transistor suitable for switching applications.

Minimum DS Breakdown Voltage: 60 V

With a minimum breakdown voltage of 60V, this transistor can handle higher voltages in switching applications without failing.

Maximum Drain Current (ID): 2.4 A

The high maximum drain current allows the transistor to handle large current loads, making it suitable for high-power switching applications.

Maximum Power Dissipation (Abs): 1.62W

With a maximum power dissipation of 1.62W, this transistor can handle power efficiently without overheating, ensuring reliable performance.

Maximum Operating Temperature: 175 °C

The high maximum operating temperature of 175°C allows the transistor to operate in harsh environments without performance degradation.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMPH6250SQ-13 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

2.4 A

Maximum Drain-Source On Resistance:

.24 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

23.2 pF

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMPH6250SQ-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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