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DMN4800LSSL-13

Diodes Incorporated

DMN4800LSSL-13 by Diodes Incorporated

DMN4800LSSL-13 by Diodes Inc. is a N-channel FET with 30V DS breakdown voltage, 50A IDM, and 0.014 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features include single configuration with built-in diode, small outline package style, and matte tin terminal finish.

Median Price

$0.740

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 4,651 parts In-Stock

1+ parts

$0.740

100+ parts

$0.295

1k+ parts

$0.202

10k+ parts

$0.149

4,651

$0.740

$0.295

$0.202

$0.149

Mouser Electronics

USA . 2,039 parts In-Stock

1+ parts

$0.740

100+ parts

$0.295

1k+ parts

$0.202

10k+ parts

$0.158

2,039

$0.740

$0.295

$0.202

$0.158

Newark

USA . 3,390 parts In-Stock

1+ parts

$0.798

100+ parts

$0.353

1k+ parts

$0.260

10k+ parts

-

3,390

$0.798

$0.353

$0.260

-

Verical

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.149

2,500

-

-

-

$0.149

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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50

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 4,469 parts In-Stock

1+ parts

$0.111

100+ parts

-

1k+ parts

-

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4,469

$0.111

-

-

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Perfect Parts

USA . 31,874 parts In-Stock

1+ parts

-

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-

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31,874

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-

-

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Lixinc

USA . 10,373 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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10,373

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-

-

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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10,000

-

-

-

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Eastek

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.160

10k+ parts

-

5,000

-

-

$0.160

-

Infinite Electronics LLP (Excess)

. 310 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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310

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-

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Netroflash

USA . 100 parts In-Stock

1+ parts

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100+ parts

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100

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Overview

Unlock the power of innovation with the DMN4800LSSL-13 by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-quality Power Field Effect Transistors (FET) like no other. This N-channel transistor with built-in diode is perfect for a variety of switching applications. With a maximum drain current of 8A and a minimum DS breakdown voltage of 30V, this product offers exceptional performance and reliability. Say goodbye to inefficiency and hello to seamless operation with the DMN4800LSSL-13 by Diodes Incorporated.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL FETs typically have better performance and efficiency compared to P-CHANNEL FETs, making this product a good choice for various applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and reduces the need for additional components, making it more cost-effective.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and efficient performance in such scenarios.

Surface Mount: YES

Surface mount technology allows for easy integration onto PCBs, saving space and facilitating automated assembly processes.

Minimum DS Breakdown Voltage: 30 V

With a high breakdown voltage, this FET can handle higher voltages, making it suitable for a wide range of applications.

Maximum Drain Current (ID): 8 A

Capable of handling high current loads, making it suitable for power applications.

Maximum Power Dissipation (Abs): 1.46 W

The low power dissipation ensures efficient operation and minimizes heat generation.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this FET can withstand harsh environments and extended operation.

Maximum Drain-Source On Resistance: 0.014 ohm

Low on-resistance leads to higher efficiency and less power loss in the circuit.

Technical Specifications

Power Field Effect Transistors (FET) DMN4800LSSL-13 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

8 A

Maximum Drain Current (ID):

6.7 A

Maximum Drain-Source On Resistance:

.014 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

50 A

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMN4800LSSL-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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