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DMN4020LFDE-7

Diodes Incorporated

DMN4020LFDE-7 by Diodes Incorporated

DMN4020LFDE-7 by Diodes Inc. is a N-channel FET with 40V DS breakdown voltage and 6.7A max drain current, ideal for switching applications. It operates in enhancement mode with 0.02 ohm max on-resistance, featuring a small outline package style for surface mount assembly at temperatures ranging from -55 to 150°C.

Median Price

$0.397

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 9,802 parts In-Stock

1+ parts

$0.480

100+ parts

$0.285

1k+ parts

$0.181

10k+ parts

$0.142

9,802

$0.480

$0.285

$0.181

$0.142

Mouser Electronics

USA . 3,523 parts In-Stock

1+ parts

$0.570

100+ parts

$0.306

1k+ parts

$0.192

10k+ parts

$0.152

3,523

$0.570

$0.306

$0.192

$0.152

Newark

USA . 970 parts In-Stock

1+ parts

$0.662

100+ parts

$0.390

1k+ parts

$0.287

10k+ parts

-

970

$0.662

$0.390

$0.287

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Verical

USA . 39,000 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

$0.140

39,000

-

-

-

$0.140

Farnell

UK . 1,595 parts In-Stock

1+ parts

-

100+ parts

$0.306

1k+ parts

$0.166

10k+ parts

$0.162

1,595

-

$0.306

$0.166

$0.162

Element14

Singapore . 1,595 parts In-Stock

1+ parts

-

100+ parts

$0.314

1k+ parts

$0.179

10k+ parts

-

1,595

-

$0.314

$0.179

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 42,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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$0.166

42,000

-

-

-

$0.166

Component Sense

UK . 37,565 parts In-Stock

1+ parts

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100+ parts

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37,565

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-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 2,435 parts In-Stock

1+ parts

$0.377

100+ parts

$0.242

1k+ parts

$0.147

10k+ parts

$0.121

2,435

$0.377

$0.242

$0.147

$0.121

Component Stockers USA

USA . 96,181 parts In-Stock

1+ parts

$0.480

100+ parts

$0.290

1k+ parts

$0.180

10k+ parts

$0.140

96,181

$0.480

$0.290

$0.180

$0.140

Northwest PG Solutions

USA . 1,401 parts In-Stock

1+ parts

$2.636

100+ parts

-

1k+ parts

-

10k+ parts

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1,401

$2.636

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-

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Metaverse IC Inc.

Canada . 210,000 parts In-Stock

1+ parts

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100+ parts

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210,000

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Perfect Parts

USA . 27,182 parts In-Stock

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27,182

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QUARKTWIN TECHNOLOGY LTD

USA . 12,332 parts In-Stock

1+ parts

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100+ parts

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12,332

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Eastek

USA . 6,000 parts In-Stock

1+ parts

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6,000

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Kepictronics

USA . 3,000 parts In-Stock

1+ parts

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3,000

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Lixinc

USA . 1,920 parts In-Stock

1+ parts

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1,920

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Native Components

USA . 999 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$2.324

10k+ parts

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999

-

-

$2.324

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Overview

Unlock the potential of your electronics with the DMN4020LFDE-7 by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated ensures top-quality components for all your small signal field effect transistor needs. Ideal for switching applications, this N-channel FET offers enhanced performance and reliability. With a maximum drain current of 6.7A and a minimum DS breakdown voltage of 40V, this transistor is designed to handle a wide range of tasks with ease. Trust Diodes Incorporated to deliver value and efficiency in every product, including the DMN4020LFDE-7.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-term reliability.

Polarity or Channel Type: N-CHANNEL

Allows for efficient switching operations in electronic circuits.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by including a built-in diode for protection.

Transistor Application: SWITCHING

Ideal for applications that require fast switching speeds and high efficiency.

Surface Mount: YES

Enables easy and secure mounting on a circuit board to save space.

Minimum DS Breakdown Voltage: 40 V

Provides a sufficient voltage rating for reliable operation in various applications.

Maximum Drain Current (ID): 6.7 A

Can handle a high current load, suitable for power applications.

Maximum Drain-Source On Resistance: 0.02 ohm

Offers low resistance for efficient power flow and minimal heat generation.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, ensuring performance in harsh environments.

Minimum Operating Temperature: -55 °C

Designed to operate in sub-zero temperatures, making it versatile for different climate conditions.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMN4020LFDE-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (ID):

6.7 A

Maximum Drain-Source On Resistance:

.02 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-N3

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMN4020LFDE-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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