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DMN4010LFG-7

Diodes Incorporated

DMN4010LFG-7 by Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.45 W; Maximum Operating Temperature: 150 Cel; Transistor Application: SWITCHING;

Median Price

$0.535

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

RS (Exports)

UK . 20 parts In-Stock

1+ parts

$0.070

100+ parts

-

1k+ parts

-

10k+ parts

-

20

$0.070

-

-

-

RS Americas

USA . 20 parts In-Stock

1+ parts

$0.572

100+ parts

$0.446

1k+ parts

$0.355

10k+ parts

-

20

$0.572

$0.446

$0.355

-

Mouser Electronics

USA . 8,206 parts In-Stock

1+ parts

$0.790

100+ parts

$0.375

1k+ parts

$0.266

10k+ parts

$0.204

8,206

$0.790

$0.375

$0.266

$0.204

DigiKey

USA . 990 parts In-Stock

1+ parts

$0.810

100+ parts

$0.375

1k+ parts

$0.260

10k+ parts

$0.196

990

$0.810

$0.375

$0.260

$0.196

Newark

USA . 1,038 parts In-Stock

1+ parts

$0.876

100+ parts

$0.499

1k+ parts

$0.390

10k+ parts

-

1,038

$0.876

$0.499

$0.390

-

Verical

USA . 44,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.187

44,000

-

-

-

$0.187

Arrow

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.248

4,000

-

-

-

$0.248

Farnell

UK . 2,000 parts In-Stock

1+ parts

-

100+ parts

$0.315

1k+ parts

$0.210

10k+ parts

$0.174

2,000

-

$0.315

$0.210

$0.174

Element14

Singapore . 2,000 parts In-Stock

1+ parts

-

100+ parts

$0.535

1k+ parts

$0.357

10k+ parts

$0.341

2,000

-

$0.535

$0.357

$0.341

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

20,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Allen Electronics Distributors

USA . 20 parts In-Stock

1+ parts

$0.530

100+ parts

$0.410

1k+ parts

$0.370

10k+ parts

-

20

$0.530

$0.410

$0.370

-

Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$0.785

100+ parts

$0.714

1k+ parts

$0.644

10k+ parts

-

100

$0.785

$0.714

$0.644

-

Native Components

USA . 982 parts In-Stock

1+ parts

$16.300

100+ parts

-

1k+ parts

-

10k+ parts

-

982

$16.300

-

-

-

Northwest PG Solutions

USA . 795 parts In-Stock

1+ parts

$17.930

100+ parts

$16.137

1k+ parts

-

10k+ parts

-

795

$17.930

$16.137

-

-

Eastek

USA . 30,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

30,000

-

-

-

-

GreenTree Electronics

Israel . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

20,000

-

-

-

-

Authorized Procurement Solutions

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,000

-

-

-

-

Technical Specifications

Small Signal Field Effect Transistors (FET) DMN4010LFG-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (ID):

11.5 A

Maximum Drain-Source On Resistance:

.012 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

S-PDSO-N5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

5

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMN4010LFG-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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