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DMN3032LFDBQ-13

Diodes Incorporated

DMN3032LFDBQ-13 by Diodes Incorporated

DMN3032LFDBQ-13 by Diodes Incorporated is a N-CHANNEL FET for SWITCHING applications. Features include 30V DS Breakdown Voltage, 25A IDM, and 0.03 ohm Drain-Source Resistance. Ideal for power management in automotive electronics due to AEC-Q101 compliance.

Median Price

$0.790

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 69,631 parts In-Stock

1+ parts

$0.790

100+ parts

$0.317

1k+ parts

$0.198

10k+ parts

$0.167

69,631

$0.790

$0.317

$0.198

$0.167

DigiKey

USA . 9,450 parts In-Stock

1+ parts

$0.790

100+ parts

$0.317

1k+ parts

$0.218

10k+ parts

$0.157

9,450

$0.790

$0.317

$0.218

$0.157

Verical

USA . 20,000 parts In-Stock

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$0.144

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$0.144

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ACDS - Activité Composants Distribution Service

France . 20,000 parts In-Stock

1+ parts

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20,000

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Bristol Electronics

USA . 20,000 parts In-Stock

1+ parts

-

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$0.292

1k+ parts

$0.144

10k+ parts

$0.117

20,000

-

$0.292

$0.144

$0.117

NAC Semi

USA . 20,000 parts In-Stock

1+ parts

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$0.287

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$0.287

Dan-Mar Components

USA . 20,000 parts In-Stock

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IBS Electronics

USA . 10,000 parts In-Stock

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$0.224

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$0.224

Nova Conductors

Japan . 800 parts In-Stock

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800

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Distributors (Availability)

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Semicontronic

India . 44,881 parts In-Stock

1+ parts

$0.122

100+ parts

$0.119

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$0.118

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44,881

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$0.119

$0.118

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Ampacity Inc.

Singapore . 44,532 parts In-Stock

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$0.122

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Modulus Dynamics

Lithuania . 438 parts In-Stock

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$0.216

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$0.216

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$0.216

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438

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Corohmni

South Africa . 337 parts In-Stock

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$0.216

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337

$0.216

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QUARKTWIN TECHNOLOGY LTD

USA . 17,649 parts In-Stock

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Continental Prestige Electronics

USA . 3,384 parts In-Stock

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Argo Parts USA

USA . 103 parts In-Stock

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Aranea Global

USA . 100 parts In-Stock

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100

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Overview

Experience the power of cutting-edge technology with Diodes Incorporated's DMN3032LFDBQ-13 Power FET. Designed for high-performance switching applications, this N-channel transistor offers reliability and efficiency like no other. With its innovative design and top-notch quality, customers can trust in its superior performance and durability. Whether you're looking to optimize your power management system or enhance your electronic devices, the DMN3032LFDBQ-13 is the perfect solution. Invest in excellence and take your projects to the next level with Diodes Incorporated.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable material that can withstand various environmental conditions.

Polarity or Channel Type: N-CHANNEL

Allows for efficient switching operations.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Provides versatility and flexibility in circuit design.

Transistor Application: SWITCHING

Designed for high-speed switching applications.

Surface Mount: YES

Easy to integrate into existing circuit designs.

Minimum DS Breakdown Voltage: 30 V

Can handle high voltage applications.

Operating Mode: ENHANCEMENT MODE

Efficient operation with low power consumption.

Maximum Pulsed Drain Current (IDM): 25 A

Capable of handling high current pulses.

Avalanche Energy Rating (EAS): 10 mJ

Provides protection against transient voltage spikes.

Maximum Power Dissipation (Abs): 1.7 W

Efficient power handling capability.

Package Style (Meter): SMALL OUTLINE

Compact size for space-constrained applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Reliable and high-performance transistor technology.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments.

Minimum Operating Temperature: -55 °C

Suitable for use in extreme cold temperatures.

Maximum Drain Current (ID): 6.2 A

Capable of handling high continuous current.

Maximum Drain-Source On Resistance: 0.03 ohm

Low on-resistance for efficient power dissipation.

Terminal Finish: NICKEL PALLADIUM GOLD

Corrosion-resistant terminal finish for long-term reliability.

Maximum Feedback Capacitance (Crss): 44 pF

Low feedback capacitance for improved performance.

Reference Standard: AEC-Q101

Complies with automotive industry standards for quality and reliability.

Technical Specifications

Power Field Effect Transistors (FET) DMN3032LFDBQ-13 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Avalanche Energy Rating (EAS):

10 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

6.2 A

Maximum Drain-Source On Resistance:

.03 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

44 pF

JESD-30 Code:

S-PDSO-N6

JESD-609 Code:

e4

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

25 A

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMN3032LFDBQ-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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