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DMN1001UCA10-7

Diodes Incorporated

DMN1001UCA10-7 by Diodes Incorporated

DMN1001UCA10-7 by Diodes Inc. is a N-CHANNEL FET with COMMON DRAIN configuration, 2 ELEMENTS WITH BUILT-IN DIODE. It operates in ENHANCEMENT MODE for SWITCHING applications. With a max power dissipation of 2.4W and operating temperature range from -55 to 150°C, it's ideal for various electronic devices requiring high-performance FETs.

Median Price

$0.978

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 2,950 parts In-Stock

1+ parts

$0.632

100+ parts

-

1k+ parts

-

10k+ parts

-

2,950

$0.632

-

-

-

Farnell

UK . 2,950 parts In-Stock

1+ parts

$0.975

100+ parts

$0.514

1k+ parts

$0.324

10k+ parts

$0.300

2,950

$0.975

$0.514

$0.324

$0.300

Element14

Singapore . 2,950 parts In-Stock

1+ parts

$0.980

100+ parts

$0.586

1k+ parts

$0.374

10k+ parts

$0.353

2,950

$0.980

$0.586

$0.374

$0.353

Mouser Electronics

USA . 632 parts In-Stock

1+ parts

$1.120

100+ parts

$0.500

1k+ parts

$0.359

10k+ parts

$0.289

632

$1.120

$0.500

$0.359

$0.289

DigiKey

USA . 2,803 parts In-Stock

1+ parts

$1.160

100+ parts

$0.510

1k+ parts

$0.370

10k+ parts

$0.283

2,803

$1.160

$0.510

$0.370

$0.283

Verical

USA . 111,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.278

111,000

-

-

-

$0.278

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

NAC Semi

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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3,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Eastek

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Northwest PG Solutions

USA . 1,425 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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1,425

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-

-

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Native Components

USA . 777 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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777

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-

Overview

Unlock the potential of your electronic devices with the DMN1001UCA10-7 by Diodes Incorporated. Known for their high-quality manufacturing, Diodes Incorporated brings you a small signal field-effect transistor that is perfect for switching applications. With its common drain configuration and built-in diode, this N-channel transistor offers superior performance and reliability. Whether you're designing consumer electronics or industrial equipment, this transistor will provide you with the value, benefits, and advantages you need to take your projects to the next level. Trust Diodes Incorporated to deliver top-notch products that exceed your expectations.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have lower on-state resistance and higher mobility, making them suitable for high performance applications.

Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

Common drain configuration is commonly used for voltage buffer applications, and the built-in diode adds versatility for various circuit designs.

Transistor Application: SWITCHING

Being specifically designed for switching applications, this FET ensures fast turn-on and turn-off times, making it efficient for switching signals.

Surface Mount: YES

Surface mount technology enables easy and reliable PCB assembly, reducing manufacturing costs and improving overall product quality.

Package Shape: RECTANGULAR

Rectangular package shape allows for efficient placement on circuit boards and saves space, especially in compact electronic devices.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer better control over the switching operation, allowing for precise and efficient switching in various applications.

Maximum Power Dissipation (Abs): 2.4 W

With a high maximum power dissipation, this FET can handle significant power levels without overheating, ensuring reliable performance in demanding conditions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology provides enhanced performance characteristics, such as high input impedance and low leakage current, making it ideal for small signal applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this FET to withstand harsh environmental conditions and ensures stability over a wide temperature range.

Transistor Element Material: SILICON

Silicon-based transistors offer reliable performance, high temperature tolerance, and excellent scalability, making them a popular choice for various electronic devices.

Technical Specifications

Small Signal Field Effect Transistors (FET) DMN1001UCA10-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Diodes Incorporated

Specs

Additional Features:

ESD PROTECTED

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-XBCC-N10

JESD-609 Code:

e4

No. of Elements:

2

No. of Terminals:

10

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

NICKEL GOLD

Terminal Form:

NO LEAD

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DMN1001UCA10-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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